IRF830, SiHF830 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 500 DS Available Repetitive avalanche rated R ( )V = 10 V 1.5 DS(on) GS Fast switching Available Q max. (nC) 38 g Ease of paralleling Q (nC) 5.0 gs Simple drive requirements Q (nC) 22 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 D Note * This datasheet provides information about parts that are TO-220AB RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION Third generation power MOSFETs from Vishay provide the S designer with the best combination of fast switching, S D ruggedized device design, low on-resistance and G N-Channel MOSFET cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF830PbF Lead (Pb)-free SiHF830-E3 IRF830 SnPb SiHF830 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 20 GS T = 25 C 4.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.9 A C a Pulsed Drain Current I 18 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 280 mJ AS a Repetitive Avalanche Current I 4.5 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 24 mH, R = 25 , I = 4.5 A (see fig. 12). DD J g AS c. I 4.5 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 Document Number: 91063 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF830, SiHF830 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.61 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.7 A -- 1.5 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.7 A 2.5 - - S fs DS D Dynamic Input Capacitance C - 610 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -68- rss Total Gate Charge Q -- 38 g I = 3.1 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 5.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --22 gd Turn-On Delay Time t -8.2 - d(on) Rise Time t -16 - r V = 250 V, I = 3.1 A DD D ns b R = 12 , R = 79, see fig. 10 Turn-Off Delay Time t -4g D 2- d(off) Fall Time t -16- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Gate Input Resistance R f = 1 MHz, open drain 0.5 - 2.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.5 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 18 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 4.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 320 640 ns rr b T = 25 C, I = 3.1 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.0 2.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0754-Rev. C, 02-May-16 Document Number: 91063 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000