X-On Electronics has gained recognition as a prominent supplier of IRF9Z30PBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRF9Z30PBF MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRF9Z30PBF Vishay

IRF9Z30PBF electronic component of Vishay
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See Product Specifications
Part No.IRF9Z30PBF
Manufacturer: Vishay
Category: MOSFET
Description: P-Channel 50 V 18A (Tc) 74W (Tc) Through Hole TO-220AB
Datasheet: IRF9Z30PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 1.7437 ea
Line Total: USD 12.21

Availability - 557
Ships to you between
Fri. 21 Jun to Thu. 27 Jun
MOQ: 7  Multiples: 1
Pack Size: 1
Availability Price Quantity
735 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 3.2292
10 : USD 2.6448
100 : USD 2.5181
500 : USD 1.9906
1000 : USD 1.5031
5000 : USD 1.4462

1004 - WHS 2


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 2.5185
10 : USD 1.909
100 : USD 1.6215
250 : USD 1.564
500 : USD 1.495

106 - WHS 3


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 22
Multiples : 1
22 : USD 1.8525
50 : USD 1.6413
100 : USD 1.5925

73 - WHS 4


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 6
Multiples : 1
6 : USD 1.4522
10 : USD 1.3881
100 : USD 1.3337
250 : USD 1.3278

557 - WHS 5


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 7
Multiples : 1
7 : USD 1.7437
10 : USD 1.5895
100 : USD 1.4691
250 : USD 1.4514
500 : USD 1.3382
1000 : USD 1.2468

   
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Continuous Drain Current
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We are delighted to provide the IRF9Z30PBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9Z30PBF and other electronic components in the MOSFET category and beyond.

IRF9Z34S, SiHF9Z34S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced process technology V (V) -60 DS Surface mount (IRF9Z34S, SiHF9Z34S) R ( )V = -10 V 0.14 DS(on) GS 175 C operating temperature Available Q max. (nC) 34 g Fast switching Q (nC) 9.9 gs P-channel Available Q (nC) 16 gd Fully avalanche rated Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For S example, parts with lead (Pb) terminations are not RoHS-compliant. 2 D PAK (TO-263) Please see the information / tables in this datasheet for details. DESCRIPTION G Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer D G with an extremely efficient and reliable device for use in a D S wide variety of applications. 2 P-Channel MOSFET The D PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The 2 D PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF9Z34S-GE3 SiHF9Z34STRL-GE3 SiHF9Z34STRR-GE3 a a Lead (Pb)-free IRF9Z34SPbF IRF9Z34STRLPbF IRF9Z34STRRPbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -18 C Continuous Drain Current V at -10 V I GS D T = 100 C -13 A C a, e Pulsed Drain Current I -72 DM Linear Derating Factor 0.59 W/C b, e Single Pulse Avalanche Energy E 370 mJ AS a Avalanche Current I -18 A AR a Repetitive Avalanche Energy E 8.8 mJ AR T = 25 C 88 C Maximum Power Dissipation P W D T = 25 C 3.7 A c, e Peak Diode Recovery dV/dt dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = - 25 V, starting T = 25 C, L = 1.3 mH, R = 25 , I = - 18 A (see fig. 12). DD J g AS c. I - 18 A, dI/dt 170 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF9Z34, SiHF9Z34 data and test conditions. S16-0754-Rev. E, 02-May-16 Document Number: 91093 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9Z34S, SiHF9Z34S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 thJA a mounted, steady-state) C/W Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -60 - - V DS GS D c V Temperature Coefficient V /T Reference to 25 C, I = -1 mA --0.06 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I A DSS V = -48 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-Source On-State Resistance R V = -10 V I = -11 A - - 0.14 DS(on) GS D c Forward Transconductance g V = -25 V, I = -11 A 5.9 - - S fs DS D Dynamic Input Capacitance C - 1100 - iss V = 0 V, GS Output Capacitance C -V = -25 V, 620- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -100- rss Total Gate Charge Q -- 34 g I = -18 A, V = -48 V, D DS Gate-Source Charge Q --V = -10 V 9.9 nC gs GS b, c see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -18 - d(on) Rise Time t - 120 - r V = -30 V, I = -18 A, DD D ns b, c R = 12 , R = 1.5 , see fig. 10 g D Turn-Off Delay Time t -20- d(off) Fall Time t -58- f Gate Input Resistance R f = 1 MHz, open drain 0.7 - 3.9 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- -18 S showing the A integral reverse G a p -n junction diode Pulsed Diode Forward Current I S -- -72 SM b Body Diode Voltage V T = 25 C, I = -18 A, V = 0 V -- -6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b, c T = 25 C, I = -18 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 280 520 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes b. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). c. Pulse width 300 s duty cycle 2 %. d. Uses IRF9Z34, SiHF9Z34 data and test conditions. S16-0754-Rev. E, 02-May-16 Document Number: 91093 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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