X-On Electronics has gained recognition as a prominent supplier of IRFB9N65APBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB9N65APBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB9N65APBF Vishay

IRFB9N65APBF electronic component of Vishay
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Part No.IRFB9N65APBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
Datasheet: IRFB9N65APBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1165 ea
Line Total: USD 3.12 
Availability - 852
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5608
10 : USD 2.5036
50 : USD 2.4674
100 : USD 2.4292

852
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 3.1165
10 : USD 2.047
100 : USD 1.8285
250 : USD 1.771
500 : USD 1.702
1000 : USD 1.6905

   
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We are delighted to provide the IRFB9N65APBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB9N65APBF and other electronic components in the MOSFETs category and beyond.

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IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Q Results in Simple Drive g V (V) 650 DS Requirement Available R ( )V = 10 V 0.93 DS(on) GS Improved Gate, Avalanche and Dynamic dV/dt RoHS* Q (Max.) (nC) 48 g COMPLIANT Ruggedness Q (nC) 12 gs Fully Characterized Capacitance and Avalanche Voltage Q (nC) 19 gd and Current Configuration Single Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-220AB Switch Mode Power Supply (SMPS) Uninterruptible Power Supply G High Speed Power Switching TYPICAL SMPS TOPOLOGIES S D Single Transistor Flyback S G Single Transistor Forward N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFB9N65APbF Lead (Pb)-free SiHFB9N65A-E3 IRFB9N65A SnPb SiHFB9N65A ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 8.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 5.4 A C a Pulsed Drain Current I 21 DM Linear Derating Factor 1.3 W/C b Single Pulse Avalanche Energy E 325 mJ AS a Repetitive Avalanche Current I 5.2 A AR a Repetitive Avalanche Energy E 16 mJ AR Maximum Power Dissipation T = 25 C P 167 W C D c Peak Diode Recovery dV/dt dV/dt 2.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 24 mH, R = 25 , I = 5.2 A (see fig. 12). J g AS c. I 5.2 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91104 www.vishay.com S11-0561-Rev. C, 11-Apr-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFB9N65A, SiHFB9N65A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -0.75 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 670 - mV/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 650 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 5.1 A - - 0.93 DS(on) GS D Forward Transconductance g V = 50 V, I = 3.1 A 3.9 - - S fs DS D Dynamic Input Capacitance C - 1417 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 177- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.0- rss pF V = 1.0 V, f = 1.0 MHz - 1912 - DS Output Capacitance C oss V = 0 V V = 520 V, f = 1.0 MHz - 48 - GS DS c Effective Output Capacitance C eff. V = 0 V to 520 V -84 - oss DS Total Gate Charge Q -- 48 g I = 5.2 A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 12 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --19 gd Turn-On Delay Time t -14 - d(on) V = 325 V, I = 5.2 A DD D Rise Time t -20 - r R = 9.1 ,R = 62 , ns g D Turn-Off Delay Time t -3b 4- d(off) see fig. 10 Fall Time t -18- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.2 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 21 p - n junction diode SM S b Body Diode Voltage V T = 25 C, I = 5.2 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 493 739 ns rr b T = 25 C, I = 5.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -2.1 3.2 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS d. Uses SiHFIB5N65A data and test conditions. www.vishay.com Document Number: 91104 2 S11-0561-Rev. C, 11-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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