X-On Electronics has gained recognition as a prominent supplier of IRFD110PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFD110PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFD110PBF Vishay

IRFD110PBF electronic component of Vishay
IRFD110PBF Vishay
IRFD110PBF MOSFETs
IRFD110PBF  Semiconductors

Images are for reference only
See Product Specifications
Part No. IRFD110PBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
Datasheet: IRFD110PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 2.1
10 : USD 1.8084
100 : USD 1.41
500 : USD 1.1647
1000 : USD 0.9195
2000 : USD 0.8582
5000 : USD 0.8153
10000 : USD 0.7847
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MOQ : 1
Multiples : 1
1 : USD 1.6585
10 : USD 1.1875
100 : USD 0.9746
500 : USD 0.8662
1000 : USD 0.682
5000 : USD 0.6355
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MOQ : 400
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400 : USD 0.689
750 : USD 0.6695
2500 : USD 0.6125
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MOQ : 1
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1 : USD 0.6942
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MOQ : 1
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1 : USD 0.9177
10 : USD 0.7387
30 : USD 0.5555
100 : USD 0.4321
500 : USD 0.3919
1000 : USD 0.3699
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MOQ : 1
Multiples : 1
1 : USD 1.2951
10 : USD 0.9555
100 : USD 0.7805
500 : USD 0.6669
1000 : USD 0.5908
2500 : USD 0.5908
5000 : USD 0.5862
10000 : USD 0.5749
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MOQ : 1
Multiples : 1
1 : USD 1.6483
10 : USD 0.7736
53 : USD 0.3528
146 : USD 0.3326
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MOQ : 82
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82 : USD 0.8203
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MOQ : 55
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55 : USD 1.2167
100 : USD 0.9742
500 : USD 0.7947
1000 : USD 0.699
2500 : USD 0.6256
5000 : USD 0.6231
10000 : USD 0.6008
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MOQ : 13
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13 : USD 1.5722
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MOQ : 13
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13 : USD 0.6874
100 : USD 0.6323
500 : USD 0.6259
1000 : USD 0.61
2500 : USD 0.5977
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MOQ : 49
Multiples : 1
49 : USD 0.8417
50 : USD 0.837
100 : USD 0.8353
200 : USD 0.8157
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MOQ : 13
Multiples : 1
13 : USD 1.0921
100 : USD 0.9222
500 : USD 0.7888
1000 : USD 0.6791
2500 : USD 0.6344
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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
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Factory Pack Quantity :
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Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFD110PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFD110PBF and other electronic components in the MOSFETs category and beyond.

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The IRFD110PBF Vishay Power MOSFET is an N-channel enhancement mode depletion enhancement MOSFET. It is designed to be used as an energize load switch and is provided in a TO-220FP package. It features a low on-resistance of 0.019 O, a maximum drain current rating of 66 A, and a maximum drain-source voltage rating of 500V. This device is suitable for a wide range of applications including DC/DC converter, switch mode power supplies, and other systems operating from 12V - 24V.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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