IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Surface-mount (IRFR020, SiHFR020) (TO-252) (TO-251) Available in tape and reel D D G Fast switching Available Ease of paralleling S G S Simple drive requirements D G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 60 DS designer with the best combination of fast switching, R ()V = 10 V 0.10 DS(on) GS ruggedized device design, low on-resistance and Q max. (nC) 25 g cost-effectiveness. (nC) 5.8 Q gs The DPAK is designed for surface mounting using vapor Q (nC) 11 phase, infrared, or wave soldering techniques. gd Configuration Single ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and halogen-free SiHFR020-GE3 SiHFR020TR-GE3 SiHFU020-GE3 a a Lead (Pb)-free IRFR020TRRPbF IRFR020TRPbF - Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 14 C Continuous drain current V at 10 V I GS D T = 100 C 9.0 A C a Pulsed drain current I 56 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 91 mJ AS Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 12) b. V = 25 V, starting T = 25 C, L = 541 H, R = 25 , I = 14 A (see fig. 13) DD J g AS c. I 17 A, dI/dt 110 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0466-Rev. D, 17-May-2021 Document Number: 90335 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR020, IRFU020, SiHFR020, SiHFU020 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R - - 110 thJA a Maximum junction-to-ambient (PCB mount) R -- 50 C/W thJA Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.073 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 8.4 A - - 0.10 DS(on) GS D Forward transconductance g V = 25 V, I = 8.4 A 6.2 - - S fs DS D Dynamic Input capacitance C -640 - iss V = 0 V, GS Output capacitance C -3V = 25 V, 60- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -79- rss Total gate charge Q -- 25 g I = 17 A, V = 48 V, D DS Gate-source charge Q --V = 10 V 5.8 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --11 gd Turn-on delay time t -13 - d(on) Rise time t -58 - r V = 30 V, I = 17 A, DD D ns b R = 18 , R = 1.7 , see fig. 10 G D Turn-off delay time t -25- d(off) Fall time t -42- f D Internal drain inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L -7.5 - S c die contact S Drain-Source Body Diode Characteristics Continuous source-drain diode current I MOSFET symbol -- 14 S D showing the A a integral reverse G Pulsed diode forward current I -- 56 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 14 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 88 180 ns rr b T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.29 0.64 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 12) b. Pulse width 300 s duty cycle 2 % S21-0466-Rev. D, 17-May-2021 Document Number: 90335 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000