IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 400 DS Repetitive avalanche rated R ()V = 10 V 1.8 DS(on) GS Surface mount (IRFR320,SiHFR320) Q (Max.) (nC) 20 g Straight lead (IRFU320,SiHFU320) Q (nC) 3.3 gs Available Available in tape and reel Q (nC) 11 gd Fast switching Configuration Single Ease of paralleling D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) DESCRIPTION D D G Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and S G S D cost-effectiveness. G S The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a Lead (Pb)-free and Halogen-free SiHFR320-GE3 SiHFR320TRL-GE3 SiHFR320TR-GE3 - SiHFU320-GE3 a a a IRFR320PbF IRFR320TRLPbF IRFR320TRPbF IRFR320TRRPbF IRFU320PbF Lead (Pb)-free a a a SiHFR320-E3 SiHFR320TL-E3 SiHFR320T-E3 SiHFR320TR-E3 SiHFU320-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 3.1 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.0 A C a Pulsed Drain Current I 12 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 160 mJ AS a Repetitive Avalanche Current I 3.1 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 29 mH, R = 25 , I = 3.1 A (see fig. 12). DD J g AS c. I 3.1 A, dI/dt 65 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S14-2355-Rev. E, 08-Dec-14 Document Number: 91273 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix e. When mounted on 1 square PCB (FR-4 or G-10 material). THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.51 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.9 A -- 1.8 DS(on) GS D Forward Transconductance g V = 50 V, I = 1.9 A 1.7 - - S fs DS D Dynamic Input Capacitance C - 350 - iss V = 0 V, GS Output Capacitance C -V = - 25 V, 120- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -47- rss Total Gate Charge Q -- 20 g I = 3.3 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -10 - d(on) Rise Time t -14 - r V = 200 V, I = 3.3 A, DD D ns b R = 18 , R = 56 , see fig. 10 Turn-Off Delay Time t -3g D 0- d(off) Fall Time t -13- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 3.1 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 12 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 3.1 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 270 600 ns rr b T = 25 C, I = 3.3 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.4 3.0 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S14-2355-Rev. E, 08-Dec-14 Document Number: 91273 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000