IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 200 DS Surface Mount R ( )V = 10 V 0.80 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 16 Dynamic dV/dt Rating g Repetitive Avalanche Rated Q (nC) 2.9 gs Logic Level Gate Drive Q (nC) 9.6 gd R Specified at V = 4 V and 5 V DS(on) GS Fast Switching Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION 2 D PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D G possible on- resistance in any existing surface mount S S 2 package. The D PAK (TO-263) is suitable for high current N-Channel MOSFET applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHL620S-GE3 SiHL620STRL-GE3 a IRL620SPbF IRL620STRLPbF Lead (Pb)-free IRL620STRLPbF a SiHL620S-E3 SiHL620STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 10 GS T = 25 C 5.2 C Continuous Drain Current V at 5 V I GS D A T = 100 C 3.3 C a Pulsed Drain Current I 21 DM Linear Derating Factor 0.40 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 125 mJ AS a Repetitive Avalanche Current I 5.2 A AR a Repetitive Avalanche Energy E 5.0 mJ AR Maximum Power Dissipation T = 25 C 50 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 6.9 mH, R = 25 , I = 5.2 A (see fig. 12). DD J g AS c. I 5.2 A, dI/dt 95 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91302 www.vishay.com S11-1054-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRL620S, SiHL620S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to Ambient (PCB R -40 C/W thJA Maximum Junction-to-Case (Drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.27 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b V = 10 V I = 3.1 A - - 0.80 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 2.6 A -- 1.0 GS D b Forward Transconductance g V = 50 V, I = 3.1 A 1.2 - - S fs DS D Dynamic Input Capacitance C -360 - iss V = 0 V, GS Output Capacitance C -9V = 25 V, 1- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -27- rss Total Gate Charge Q -- 16 g I = 5.2 A, V = 160 V, D DS Gate-Source Charge Q --V = 5.0 V 2.9 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --9.6 gd Turn-On Delay Time t -4.2 - d(on) Rise Time t -31 - r V = 100 V, I = 5.2 A, DD D ns b R = 9.0 , R = 20 , see fig. 10 Turn-Off Delay Time t -1g D 8- d(off) Fall Time t -17- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center Internal Source Inductance L -7.5 - S of die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 5.2 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 21 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 5.2 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 180 270 ns rr b T = 25 C, I = 5.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.1 1.7 C rr Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91302 2 S11-1054-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000