Product Information

MSP3V3-M3/89A

MSP3V3-M3/89A electronic component of Vishay

Datasheet
TVS Diodes - Transient Voltage Suppressors 100W 3.3V Unidirect

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3512 ea
Line Total: USD 0.35

116360 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3472 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1053
50 : USD 0.0844
150 : USD 0.074
500 : USD 0.0662
2500 : USD 0.0599
4500 : USD 0.0568

116360 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 0.3512
10 : USD 0.2349
100 : USD 0.0996
1000 : USD 0.0629
2500 : USD 0.0499
9000 : USD 0.0486
22500 : USD 0.0463
49500 : USD 0.0451
99000 : USD 0.0451

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Dimensions
Brand
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
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333 3 MSP3V3, MSP5.0A www.vishay.com Vishay General Semiconductor Surface-Mount TRANSZORB Transient Voltage Suppressors FEATURES Available Very low profile - typical height of 0.65 mm eSMP Series Ideal for automated placement Oxide planar chip junction Unidirectional polarity only Peak pulse power: 150 W (10 s/1000 s) ESD capability: 15 kV (air), 8 kV (contact) Top View Bottom View Meets MSL level 1, per J-STD-020C, LF maximum peak MicroSMP (DO-219AD) of 260 C AEC-Q101 qualified Cathode Anode Not recommended for PCB bottom side wave mounting Material categorization: for definitions of compliance LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS 3D Models Use in sensitive electronics protection against voltage transients induced by inductive load switching and lightin g on ICs, MOSFET, industrial, and signal lines of sensor units PRIMARY CHARACTERISTICS for protecting sensitive equipment against transient V 3.3 V to 5.0 V WM overvoltages. V 4.1 V to 7.07 V BR P 150 W PPM MECHANICAL DATA T max. 150 C J Case: MicroSMP (DO-219AD) Polarity Unidirectional Molding compound meets UL 94 V-0 flammability rating Package MicroSMP (DO-219AD) Base P/N-M3 - halogen-free, RoHS-compliant, and industrial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT (1)(2) Peak power dissipation with a 10/1000 s waveform (fig. 1) P 150 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM (2) Power dissipation T = 120 C P 1.0 W M D (3) Power dissipation T = 25 C P 0.5 W A D Operating junction and storage temperature range T , T -55 to +150 C J STG Notes (1) Non-repetitive current pulse, per fig. 1 (2) Mounted on 6.0 mm x 6.0 mm copper pads to each terminal (3) Mounted on minimum recommended pad layout Revision: 09-Nov-2020 Document Number: 88486 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D MSP3V3, MSP5.0A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM R R D D VOLTAGE TEST STAND-OFF REVERSE V AT I V AT I C PPM C PPM DEVICE (1) DEVICE V AT I CURRENT VOLTAGE LEAKAGE BR T MARKING 10/1000 s 8/20 s TYPE (V) I V CURRENT T WM CODE (mA) (V) I AT V R WM MIN. MAX. V (V) I (A) R ()V (V) I (A) R () C PPM D C PPM D (A) MSP3V3 KC 4.10 5.10 1.0 3.3 200 7.6 19.7 0.127 11.5 87 0.074 MSP5.0A AE 6.40 7.07 10 5.0 100 9.2 16.3 0.131 13.4 75 0.085 Notes To calculate maximum clamping voltage at surge current uses the following formula: V = R x I + V CL max. D PP BR max. (1) Pulse test: t 50 ms p THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VALUEUNIT (1) R 250 JA Typical thermal resistance C/W (2) R 30 JM Notes (1) Free air, mounted on recommended PCB 1 oz. pad area thermal resistance R - junction to ambient JA (2) Units mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R - junction to mount JM IMMUNITY TO STATIC ELECTRICAL DISCHARGE TO THE FOLLOWING STANDARDS (T = 25 C unless otherwise noted) A STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 k H3B > 8 kV V C (2) (1) IEC 61000-4-2 Human body model (air discharge mode) C = 150 pF, R = 330 4> 15 kV Notes (1) Immunity to IEC 61000-4-2 air discharge mode has a typical performance > 30 kV (2) System ESD standard ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE MSP3V3-M3/89A 0.006 89A 4500 7 diameter plastic tape and reel (1) MSP3V3HM3/89A 0.006 89A 4500 7 diameter plastic tape and reel MSP5.0A-M3/89A 0.006 89A 4500 7 diameter plastic tape and reel (1) MSP5.0AHM3/89A 0.006 89A 4500 7 diameter plastic tape and reel Note (1) Automotive grade Revision: 09-Nov-2020 Document Number: 88486 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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