P4KE6.8A thru P4KE540A www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % Excellent clamping capability Very fast response time DO-41 (DO-204AL) Low incremental surge resistance Solder dip 275 C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS V 5.8 V to 459 V WM Use in sensitive electronics protection against voltage V uni-directional 6.8 V to 540 V BR transients induced by inductive load switching and lighting V bi-directional 6.8 V to 440 V BR on ICs, MOSFET, signal lines of sensor units for consumer, P 400 W PPM computer, industrial, automotive, and telecommunication. P 1.5 W D I (uni-directional only) 40 A FSM MECHANICAL DATA T max. 175 C J Case: DO-41 (DO-204AL), molded epoxy body over Polarity Uni-directional, bi-directional passivated chip Package DO-41 (DO-204AL) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade DEVICES FOR BI-DIRECTION APPLICATIONS Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified For bi-directional types, use CA suffix (e.g. P4KE440CA). Terminals: matte tin plated leads, solderable per Electrical characteristics apply in both directions. J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Note P4KE250CA to P4KE540A and P4KE250A to P4KE440CA for commercial grade only Polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT (1) Peak pulse power dissipation with a 10/1000 s waveform (fig.1) P 400 W PPM (1) Peak pulse current with a 10/1000 s waveform I See next table A PPM Power dissipation on infinite heatsink at T = 75 C (fig. 5) P 1.5 W L D (2) Peak forward surge current 8.3 ms single half-sine wave uni-directional only I 40 A FSM (3) Maximum instantaneous forward voltage at 25 A for uni-directional only V 3.5/5.0 V F Operating junction and storage temperature range T , T - 55 to + 175 C J STG Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) 8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum (3) V = 3.5 V for P4KE220A and below V = 5.0 V for P4KE250A and above F F Revision: 16-Jan-18 Document Number: 88365 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000P4KE6.8A thru P4KE540A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A BREAKDOWN MAXIMUM MAXIMUM MAXIMUM MAXIMUM VOLTAGE TEST STAND-OFF REVERSE PEAK CLAMPING TEMPERATURE (1) DEVICE V AT I CURRENT VOLTAGE LEAKAGE PULSE BR T VOLTAGE COEFFICIENT TYPE (V) I V AT V CURRENT T WM WM AT I AT V PPM BR (3) (2) (mA) (V) I I D PPM V (V) (%/C) MIN. MAX. C (A) (A) P4KE6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.057 P4KE7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.061 P4KE8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.060 P4KE9.1A 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068 P4KE10A 9.5 10.5 1.0 8.55 10 27.6 14.5 0.073 P4KE11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075 P4KE12A 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078 P4KE13A 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081 P4KE15A 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084 P4KE16A 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086 P4KE18A 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088 P4KE20A 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090 P4KE22A 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092 P4KE24A 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094 P4KE27A 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096 P4KE30A 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097 P4KE33A 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098 P4KE36A 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099 P4KE39A 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100 P4KE43A 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101 P4KE47A 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101 P4KE51A 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102 P4KE56A 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103 P4KE62A 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104 P4KE68A 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104 P4KE75A 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105 P4KE82A 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105 P4KE91A 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106 P4KE100A 95.0 105 1.0 85.5 1.0 2.9 137 0.106 P4KE110A 105 116 1.0 94.0 1.0 2.6 152 0.107 P4KE120A 114 126 1.0 102 1.0 2.4 165 0.107 P4KE130A 124 137 1.0 111 1.0 2.2 179 0.107 P4KE150A 143 158 1.0 128 1.0 1.9 207 0.108 P4KE160A 152 168 1.0 136 1.0 1.8 219 0.108 P4KE170A 162 179 1.0 145 1.0 1.7 234 0.108 P4KE180A 171 189 1.0 154 1.0 1.6 246 0.108 P4KE200A 190 210 1.0 171 1.0 1.5 274 0.108 P4KE220A 209 231 1.0 185 1.0 1.2 328 0.108 P4KE250A 237 263 1.0 214 1.0 1.2 344 0.110 P4KE300A 285 315 1.0 256 1.0 1.00 414 0.110 P4KE350A 333 368 1.0 300 1.0 0.83 482 0.110 P4KE400A 380 420 1.0 342 1.0 0.73 548 0.110 P4KE440A 418 462 1.0 376 1.0 0.66 602 0.110 P4KE480A 456 504 1.0 408 1.0 0.61 658 0.110 P4KE510A 485 535 1.0 434 1.0 0.57 698 0.110 P4KE540A 513 567 1.0 459 1.0 0.54 740 0.110 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types with V of 10 V and less the I limit is doubled WM D (4) All terms and symbols are consistent with ANSI/EEE CA62.35 Revision: 16-Jan-18 Document Number: 88365 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000