SI1034CX-T1-GE3 Vishay

Si1034CX Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g 100 % R Tested g 0.396 at V = 4.5 V 0.5 Gate-Source ESD Protected: 1000 V GS Material categorization: 0.456 at V = 2.5 V 0.2 GS For definitions of compliance please see 20 0.75 0.546 at V = 1.8 V 0.2 GS www.vishay.com/doc 99912 0.760 at V = 1.5 V 0.05 GS APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits SC-89 S 1 6D 1 1 Marking Code 4 XX 2 5 G G 1 2 Lot Traceability and Date Code D 3 4 S 2 2 Part Code Top View Ordering Information: Si1034CX-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 8 GS a, b T = 25 C A 0.61 a I Continuous Drain Current (T = 150 C) D J a, b T = 70 C A A 0.49 I 2 Pulsed Drain Current DM a, b Continuous Source-Drain Diode Current T = 25 C I A A S 0.18 a, b = 25 C T 0.22 A a P W Maximum Power Dissipation D a, b T = 70 C A 0.14 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max. Unit t 5 s 470 565 b R C/W Maximum Junction-to-Ambient thJA Steady State 560 675 Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 5 s. Document Number: 67468 For technical support, please contact: pmostechsupport vishay.com www.vishay.com S13-1614-Rev. C, 29-Jul-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1034CX Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V DS GS D V Temperature Coefficient V /T 17 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 1.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1 V GS(th) DS GS D V = 0 V, V = 8 V 30 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V 1 DS GS A V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 85 C 3 DS GS J a On-State Drain Current I V = 5 V, V = 4.5 V 2 A D(on) DS GS V = 4.5 V, I = 0.5 A 0.330 0.396 GS D V = 2.5 V, I = 0.2 A 0.380 0.456 GS D a Drain-Source On-State Resistance R DS(on) V = 1.8 V, I = 0.2 A 0.420 0.546 GS D V = 1.5 V, I = 0.05 A 0.505 0.760 GS D Forward Transconductance g V = 10 V, I = 0.5 A 7.5 S fs DS D b Dynamic Input Capacitance C 43 iss Output Capacitance C 14V = 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 8 rss V = 10 V, V = 8 V, I = 0.6 A 1.3 2 DS GS D Total Gate Charge Q g 0.75 1.2 nC Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 0.6 A 0.15 gs DS GS D Gate-Drain Charge Q 0.13 gd Gate Resistance R f = 1 MHz 2.4 12.2 24.4 g Turn-On Delay Time t 11 20 d(on) Rise Time t 16 24 V = 10 V, R = 20 r DD L ns I 0.5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 2639 D GEN g d(off) Fall Time t 11 20 f Drain-Source Body Diode Characteristics a Pulse Diode Forward Current I 2A SM Body Diode Voltage V I = 0.5 A 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 10 15 ns rr Body Diode Reverse Recovery Charge Q 24 nC rr I = 0.5 A, dI/dt = 100 A/s F Reverse Recovery Fall Time t 5 a ns Reverse Recovery Rise Time t 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical support, please contact: pmostechsupport vishay.com Document Number: 67468 2 S13-1614-Rev. C, 29-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000