Si1410EDH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.070 at V = 4.5 V 3.7 GS TrenchFET Power MOSFETs: 1.8 V Rated 20 0.080 at V = 2.5 V 3.4 ESD Protected: 2000 V GS Thermally Enhanced SC-70 Package 0.100 at V = 1.8 V 3.0 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching SOT-363 PA Switch D SC-70 (6-LEADS) Level Switch D 1 6 D Marking Code 1 k AA XX G 5 D 2 D Lot Traceability and Date Code Part Code G 3 4 S Top View S Ordering Information: Si1410EDH-T1-E3 (Lead (Pb)-free) Si1410EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS T = 25 C 3.7 2.9 A a Continuous Drain Current (T = 150 C) I J D T = 85 C 2.6 2.0 A A Pulsed Drain Current I 8 DM a Continuous Diode Current (Diode Conduction) I 1.4 0.9 S T = 25 C 1.56 1.0 A a Maximum Power Dissipation P W D T = 85 C 0.81 0.52 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 60 80 a Maximum Junction-to-Ambient R thJA Steady State 100 125 C/W Maximum Junction-to-Foot (Drain) Steady State R 34 45 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71409 www.vishay.com S10-0935-Rev. B, 19-Apr-10 1 YYSi1410EDH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.45 V GS(th) DS GS D V = 0 V, V = 4.5 V 1 A DS GS Gate-Body Leakage I GSS V = 0 V, V = 12 V 10 mA DS GS V = 16 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 16 V, V = 0 V, T = 85 C 5 DS GS J a I V = 5 V, V = 4.5 V 4 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 3.7 A 0.055 0.070 GS D a Drain-Source On-State Resistance R V = 2.5 V, I = 3.4 A 0.065 0.080 DS(on) GS D V = 1.8 V, I = 1.7 A 0.080 0.100 GS D a Forward Transconductance g V = 10 V, I = 3.7 A 10 S fs DS D a Diode Forward Voltage V I = 1.4 A, V = 0 V 0.75 1.1 V SD S GS b Dynamic Total Gate Charge Q 5.6 8 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 3.7 A 0.75 nC gs DS GS D Gate-Drain Charge Q 1.10 gd Turn-On Delay Time t 0.15 0.25 d(on) Rise Time t 0.4 0.6 r V = 10 V, R = 10 DD L s I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 1.D GEN g92.8 d(off) Fall Time t 1.2 1.8 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 000 1000 8 100 6 10 T = 150 C J 4 1 T = 25 C J 2 0.1 0 0.01 0 3 6 9 12 15 18 0 36 9 12 V - Gate-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS GS Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage www.vishay.com Document Number: 71409 2 S10-0935-Rev. B, 19-Apr-10 I - Gate Current (mA) GSS I - Gate Current (A) GSS