SI1922EDH-T1-GE3 Vishay

SI1922EDH-T1-GE3 electronic component of Vishay
SI1922EDH-T1-GE3 Vishay
SI1922EDH-T1-GE3 MOSFETs
SI1922EDH-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI1922EDH-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1922EDH-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI1922EDH-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 1.3A 1.25W
Datasheet: SI1922EDH-T1-GE3 Datasheet (PDF)
Price (USD)
3000: USD 0.1485 ea
Line Total: USD 445.5 
Availability : 5820
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
3000$ 0.1485
6000$ 0.147
9000$ 0.1406

Availability 3479
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 361
Multiples : 1
QtyUnit Price
361$ 0.7219
538$ 0.4836
544$ 0.4788
795$ 0.3272
803$ 0.3238
1037$ 0.2507
1266$ 0.2055
3000$ 0.15


Availability 23280
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1599
6000$ 0.1513
9000$ 0.15
15000$ 0.1487
30000$ 0.1462


Availability 5820
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1485
6000$ 0.147
9000$ 0.1406


Availability 17460
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1515
6000$ 0.1499
9000$ 0.1434


Availability 3479
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 544
Multiples : 1
QtyUnit Price
544$ 0.4788
795$ 0.3272
803$ 0.3238
1037$ 0.2507
1266$ 0.2054
3000$ 0.15

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI1922EDH-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1922EDH-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1922EDH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g a TrenchFET Power MOSFET 0.198 at V = 4.5 V 1.3 GS a 100 % R Tested g 20 0.225 at V = 2.5 V 1.3 0.9 nC GS Typical ESD Protection 2100 V HBM a 0.263 at V = 1.8 V 1.3 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 Load Switch for Portable Applications SC-70 (6-LEADS) D D 1 2 S 1 6 D 1 1 Marking Code 5 G 2 G 1 2 CG XX 1 k 1 k Lot Traceability G G 1 2 and Date Code D 3 4 S 2 2 Part Code Top View Ordering Information: Si1922EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) S S 1 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C 1.3 C a T = 70 C 1.3 C Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 1.3 A b, c T = 70 C 1.2 A A Pulsed Drain Current I 4 DM T = 25 C 1 C Continuous Source-Drain Diode Current I S b, c T = 25 C 0.61 A T = 25 C 1.25 C T = 70 C 0.8 C Maximum Power Dissipation P W D b, c T = 25 C 0.74 A b, c T = 70 C 0.47 A Operating Junction and Storage Temperature Range T , T C - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 130 170 thJA C/W Steady State R 80 100 Maximum Junction-to-Foot (Drain) thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 C/W. Document Number: 67192 www.vishay.com S11-2307-Rev. B, 21-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1922EDH Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V DS GS D V Temperature Coefficient V /T 20 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1 V GS(th) DS GS D V = 0 V, V = 8 V 25 DS GS Gate-Source Leakage I A GSS V = 0 V, V = 4.5 V 1 DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 4 A D(on) DS GS V = 4.5 V, I = 1 A 0.165 0.198 GS D a Drain-Source On-State Resistance R V = 2.5 V, I = 1 A 0.187 0.225 DS(on) GS D V = 1.8 V, I = 0.2 A 0.210 0.263 GS D a Forward Transconductance g V = 4 V, I = 1.5 A 4 S fs DS D b Dynamic V = 10 V, V = 8 V, I = 1.5 A 1.6 2.5 DS GS D Total Gate Charge Q g 0.9 1.8 nC Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1.5 A 0.1 gs DS GS D Gate-Drain Charge Q 0.2 gd Gate Resistance R f = 1 MHz 0.4 1.9 3.8 k g Turn-On Delay Time t 43 65 d(on) Rise Time t 80 120 V = 10 V, R = 8.3 r DD L I 1.2 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 480D GEN g 720 d(off) Fall Time t 220 330 f ns Turn-on Delay Time t 22 33 d(on) Rise Time tr V = 10 V, R = 8.3 46 70 DD L I 1.2 A, V = 8 V, R = 1 Turn-Off Delay Time t D GEN g 645 968 d(off) Fall Time tr 215 323 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 1 S C A Pulse Diode Forward Current I 4 SM Body Diode Voltage V I = 1.2 A, V = 0 V 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 918 ns rr Body Diode Reverse Recovery Charge Q 24 nC rr I = 1.2 A, dI/dt = 100 A/s, T = 25 C F J 5 Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t 4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67192 2 S11-2307-Rev. B, 21-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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