SI2315BDS-T1-E3 Vishay

SI2315BDS-T1-E3 electronic component of Vishay
SI2315BDS-T1-E3 Vishay
SI2315BDS-T1-E3 MOSFETs
SI2315BDS-T1-E3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2315BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2315BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2315BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 1.8V 3.2A 1.25W
Datasheet: SI2315BDS-T1-E3 Datasheet (PDF)
Price (USD)
1: USD 0.3844 ea
Line Total: USD 0.38 
Availability : 24
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
1$ 0.3844
10$ 0.3094
30$ 0.2772
100$ 0.1777
500$ 0.148
1000$ 0.1407

Availability 37830
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2119
6000$ 0.2012
12000$ 0.1988
15000$ 0.1988
45000$ 0.1937


Availability 136933
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0987
10$ 0.6875
100$ 0.4004
500$ 0.3223
1000$ 0.2959
3000$ 0.242
9000$ 0.2332


Availability 13
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.686
10$ 0.5992
25$ 0.4578
52$ 0.3696
142$ 0.35


Availability 24
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3844
10$ 0.3094
30$ 0.2772
100$ 0.1777
500$ 0.148
1000$ 0.1407

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2315BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2315BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI2315BDS-T1-E3 is a dual N-channel enhancement mode Field-Effect Transistor (FET) constructed using advanced trench MOSFET technology. This FET is designed for high speed power switching applications. It features low on-state resistance and low gate-to-source capacitance. The device features a well-balanced performance and low RDS(ON). It has a maximum drain source voltage of 30V, with a maximum drain current of 3A, and a maximum power dissipation of 11.25W. The FET has a maximum thermal resistance of 2.5°C/W and an operating temperature range of -55°C to 125°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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