SI2315BDS-T1-E3 Vishay

SI2315BDS-T1-E3 electronic component of Vishay
SI2315BDS-T1-E3 Vishay
SI2315BDS-T1-E3 MOSFETs
SI2315BDS-T1-E3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2315BDS-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2315BDS-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI2315BDS-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 1.8V 3.2A 1.25W
Datasheet: SI2315BDS-T1-E3 Datasheet (PDF)
Price (USD)
3000: USD 0.2106 ea
Line Total: USD 631.8 
Availability : 81480
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
3000$ 0.2106
6000$ 0.2
9000$ 0.1975
12000$ 0.1975
15000$ 0.1937

Availability 81480
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2106
6000$ 0.2
9000$ 0.1975
12000$ 0.1975
15000$ 0.1937


Availability 136992
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0987
10$ 0.6875
100$ 0.4004
500$ 0.3223
1000$ 0.297
3000$ 0.2431
6000$ 0.2431
9000$ 0.2332


Availability 62
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.686
10$ 0.595
25$ 0.4522
52$ 0.3654
142$ 0.3444

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2315BDS-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2315BDS-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI2315BDS-T1-E3 is a dual N-channel enhancement mode Field-Effect Transistor (FET) constructed using advanced trench MOSFET technology. This FET is designed for high speed power switching applications. It features low on-state resistance and low gate-to-source capacitance. The device features a well-balanced performance and low RDS(ON). It has a maximum drain source voltage of 30V, with a maximum drain current of 3A, and a maximum power dissipation of 11.25W. The FET has a maximum thermal resistance of 2.5°C/W and an operating temperature range of -55°C to 125°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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