X-On Electronics has gained recognition as a prominent supplier of SI2333DDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2333DDS-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI2333DDS-T1-GE3 Vishay

SI2333DDS-T1-GE3 electronic component of Vishay
SI2333DDS-T1-GE3 Vishay
SI2333DDS-T1-GE3 MOSFETs
SI2333DDS-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI2333DDS-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 12 V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Datasheet: SI2333DDS-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3813 ea
Line Total: USD 1.91 
Availability - 5422
Ship by Tue. 20 May to Fri. 23 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
26190
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1474
6000 : USD 0.1426

5820
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1826
6000 : USD 0.173
9000 : USD 0.1717
12000 : USD 0.1717
15000 : USD 0.1691

5422
Ship by Tue. 20 May to Fri. 23 May
MOQ : 5
Multiples : 5
5 : USD 0.3813
50 : USD 0.2993
150 : USD 0.1981
500 : USD 0.1487
3000 : USD 0.1355
6000 : USD 0.1277

1736
Ship by Fri. 09 May to Tue. 13 May
MOQ : 5
Multiples : 1
5 : USD 0.6796
10 : USD 0.5856
71 : USD 0.2704
195 : USD 0.2559
1000 : USD 0.2458

26190
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1474
6000 : USD 0.1426

2910
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.7591

5820
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2733

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI2333DDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2333DDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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.The SI2333DDS-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. It is packaged in an SOT-23-3 (TO-236) Surface Mount profile. The device has a maximum voltage rating of 12 V and maximum continuous drain current rating of 6 A (Tc). It also has a power dissipation of 1.2 W (Ta) and 1.7 W (Tc). The SI2333DDS-T1-GE3 is ideal for low voltage surface mount applications such as battery-powered devices and low ON resistance switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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