New Product Si3438DV Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition TrenchFET Power MOSFET 0.0355 at V = 10 V 7.4 GS 40 5.3 nC Compliant to RoHS Directive 2002/95/EC 0.0425 at V = 4.5 V 6.7 GS APPLICATIONS DC/DC Converter TSOP-6 Top View D D 1 6 D (1, 2, 5, 6) 3 mm D 5 D 2 Marking Code AW XXX G S 3 4 Lot Traceability and Date Code G (3) Part Code 2.85 mm (4) S Ordering Information: Si3438DV-T1-E3 (Lead (Pb)-free) Si3438DV-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS T = 25 C 7.4 C T = 70 C 5.8 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 5.5 A b, c T = 70 C A 4.4 A I 20 Pulsed Drain Current DM 2.9 T = 25 C C I Continuous Source-Drain Diode Current S b,c T = 25 C 1.6 A T = 25 C 3.5 C T = 70 C 2.2 C P Maximum Power Dissipation W D b,c T = 25 C A 2 b,c T = 70 C A 1.25 , T Operating Junction and Storage Temperature Range T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, d R t 5 s 50 62.5 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot Steady State 28 35 thJF Notes: a. Based on 25 C. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 C/W. Document Number: 68393 www.vishay.com S09-0766-Rev. B, 04-May-09 1New Product Si3438DV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Condition Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 40 V DS GS D V Temperature Coefficient V /T 44 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 5.5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.4 3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 5 A 0.0295 0.0355 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4 A 0.0355 0.0425 GS D a g V = 10 V, I = 5 A 22 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 640 iss C V = 20 V, V = 0 V, f = 1 MHz Output Capacitance 73 pF oss DS GS C Reverse Transfer Capacitance 41 rss V = 20 V, V = 10 V, I = 5 A 11.7 20 DS GS D Q Total Gate Charge g 5.3 9 nC Q V = 20 V, V = 4.5 V, I = 5 A Gate-Source Charge 1.9 gs DS GS D Q Gate-Drain Charge 1.7 gd R Gate Resistance f = 1 MHz 0.45 2.2 4.4 g t Turn-On Delay Time 16 30 d(on) t V = 20 V, R = 4 Rise Time 17 35 r DD L t I 5 A, V = 4.5 V, R = 1 Turn-Off DelayTime 16 30 d(off) D GEN g t Fall Time 10 20 f ns t Turn-On Delay Time 714 d(on) t V = 20 V, R = 4 Rise Time 10 20 r DD L t I 5 A, V = 10 V, R = 1 Turn-Off DelayTime 15 30 d(off) D GEN g t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continous Source-Drain Diode Current 2.9 S C A I Pulse Diode Forward Current 20 SM V I = 1.7 A, V = 0 V Body Diode Voltage 0.78 1.2 V SD S GS t Body Diode Reverse Recovery Time 19 35 ns rr Q Body Diode Reverse Recovery Charge 14 30 nC rr I = 3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68393 2 S09-0766-Rev. B, 04-May-09