SI3457CDV-T1-GE3 Vishay

SI3457CDV-T1-GE3 electronic component of Vishay
SI3457CDV-T1-GE3 Vishay
SI3457CDV-T1-GE3 MOSFETs
SI3457CDV-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI3457CDV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3457CDV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI3457CDV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: P-Channel 30 V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
Datasheet: SI3457CDV-T1-GE3 Datasheet (PDF)
Price (USD)
3000: USD 0.1703 ea
Line Total: USD 510.9 
Availability : 2910
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
3000$ 0.1703
6000$ 0.1625
9000$ 0.1613
12000$ 0.16
15000$ 0.1575

Availability 2607
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 631
Multiples : 1
QtyUnit Price
631$ 0.4126
726$ 0.3583
732$ 0.3554
854$ 0.3047
867$ 0.3002
965$ 0.2695
1242$ 0.2094


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1703
6000$ 0.1625
9000$ 0.1613
12000$ 0.16
15000$ 0.1575


Availability 1032
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.966
10$ 0.6426
50$ 0.5096
75$ 0.2506
206$ 0.238


Availability 8730
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2543


Availability 2607
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 732
Multiples : 1
QtyUnit Price
732$ 0.3554
854$ 0.3047
867$ 0.3002
965$ 0.2695
1242$ 0.2094

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI3457CDV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3457CDV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI3457CDV-T1-GE3 is a small package, low side, N-channel MOSFET made by Vishay. It is part of the Si3457 product family, which is a series of low on-resistance, easily switched FETs. The device is a 3-pin, single-gate enhancement mode MOSFET that operates at up to 30 V, has an on-resistance of 10 mO and an Rds(on) of 2.6 mO. It is housed in a 2.9 mm by 2.1 mm package and is RoHS compliant. Typical applications include load switch, electronic load switching, DC/DC converters, and a variety of mobile, automotive, and industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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