SI3483CDV-T1-GE3 Vishay

SI3483CDV-T1-GE3 electronic component of Vishay
SI3483CDV-T1-GE3 Vishay
SI3483CDV-T1-GE3 MOSFETs
SI3483CDV-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI3483CDV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3483CDV-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI3483CDV-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -30V Vds 20V Vgs TSOP-6
Datasheet: SI3483CDV-T1-GE3 Datasheet (PDF)
Price (USD)
3000: USD 0.1625 ea
Line Total: USD 487.5 
Availability : 107670
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
3000$ 0.1625
6000$ 0.1537
9000$ 0.1525
12000$ 0.1513
15000$ 0.15

Availability 107670
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1625
6000$ 0.1537
9000$ 0.1525
12000$ 0.1513
15000$ 0.15


Availability 2113
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.77
10$ 0.5726
47$ 0.4074
127$ 0.385


Availability 75660
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2415
42000$ 0.2206
63000$ 0.2053


Availability 2910
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2553

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI3483CDV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3483CDV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI3483CDV-T1-GE3 is an N-channel, low voltage, enhancement-mode power MOSFET. It has an 18V drain-source breakdown voltage, a gate-source threshold voltage of -1.5V, and a 5.6V maximum gate-source voltage. It has a continuous drain current of 7.3A and a drain-source on-state resistance of 0.0073ohms, making it suitable for applications requiring higher currents, such as motor control, DC-DC converters, and power management circuits. This device is available in a miniature TO-251 (DPAK) package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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