Si4628DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.0030 at V = 10 V 38 GS SkyFET Monolithic TrenchFET Gen III 30 27.5 nC 0.0038 at V = 4.5 V 33 Power MOSFET and Schottky Diode GS 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook CPU Core Buck Converter SO-8 D SD 1 8 SD 2 7 SD 3 6 Schottky Diode G GD 4 5 N-Channel MOSFET Top View S Ordering Information: Si4628DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 38 C T = 70 C 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 25.4 b, c T = 70 C A 20 A I 70 Pulsed Drain Current DM T = 25 C 7 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 3.1 I Single Pulse Avalanche Current 45 AS L = 0.1 mH Single Pulse Avalanche Energy E 101 mJ AS T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C A 3.5 b, c T = 70 C A 2.2 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max.Unit b, d R t 10 s 29 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 13 16 thJF Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 C/W. Document Number: 64811 www.vishay.com S09-0871-Rev. A, 18-May-09 1Si4628DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = 1 mA Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 1 mA Gate-Source Threshold Voltage 1.0 2.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.10 0.25 DS GS I Zero Gate Voltage Drain Current mA DSS V = 30 V, V = 0 V, T = 100 C 7.5 70 DS GS J a I V 5 V, V = 10 V 40 A On -State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0024 0.0030 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 15 A 0.0030 0.0038 GS D a g V = 15 V, I = 20 A 73 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3450 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 810 pF oss DS GS C Reverse Transfer Capacitance 260 rss V = 15 V, V = 10 V, I = 20 A 58 87 DS GS D Q Total Gate Charge g 27.5 42 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 20 A 8.3 gs DS GS D Q Gate-Drain Charge 7.5 gd R Gate Resistance f = 1 MHz 0.4 1.7 3.4 g t Turn-On Delay Time 28 55 d(on) Rise Time t 20 40 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 39 75 d(off) Fall Time t 13 26 f ns t Turn-On Delay Time 12 24 d(on) Rise Time t 10 20 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 36 70 d(off) Fall Time t 918 f Drain-Source Body Diode and Schottky Characteristics T = 25 C Continuous Source-Drain Diode Current I 7 S C A a I 70 Pulse Diode Forward Current SM V I = 2 A Body Diode Voltage 0.44 0.53 V SD S Body Diode Reverse Recovery Time t 28 55 ns rr Q Body Diode Reverse Recovery Charge 21 42 nC rr I = 13 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64811 2 S09-0871-Rev. A, 18-May-09