Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ( )I (A) DS DS(on) D 0.045 at V = - 4.5 V - 3.9 GS - 20 RoHS 0.080 at V = - 2.5 V - 3.0 GS COMPLIANT S S 1 2 TSSOP-8 G G 1 2 D D 1 8 1 2 S S 1 2 2 7 Si6963BDQ S S 1 3 6 2 G G 1 4 5 2 Top View D D 1 2 P-Channel MOSFET P-Channel MOSFET Ordering Information: Si6963BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage - 20 DS V Gate-Source Voltage V 12 GS T = 25 C - 3.9 - 3.4 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 3.1 - 2.7 A A I Pulsed Drain Current - 30 DM a I - 1.0 - 0.75 Continuous Source Current (Diode Conduction) S T = 25 C 1.13 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.73 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 90 110 a R Maximum Junction-to-Ambient thJA Steady State 125 150 C/W Maximum Junction-to-Foot (Drain) Steady State R 67 80 thJF Notes: a. Surface Mounted on FR4 board. Document Number: 72772 www.vishay.com S-81221-Rev. B, 02-Jun-08 1Si6963BDQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.6 - 1.4 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 3.9 A 0.036 0.045 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 3.0 A 0.065 0.080 GS D a g V = - 10 V, I = - 3.9 A 10 S Forward Transconductance fs DS D a V I = - 1.0 A, V = 0 V - 0.71 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 8.6 11 g Q V = - 10 V, V = - 4.5 V, I = - 3.9 A Gate-Source Charge 1.2 nC gs DS GS D Gate-Drain Charge Q 2.8 gd R Gate Resistance 7.0 g Turn-On Delay Time t 33 50 d(on) t Rise Time V = - 10 V, R = 10 57 90 r DD L I - 1 A, V = - 4.5 V, R = 6 Turn-Off Delay Time t 65 100 ns D GEN g d(off) t Fall Time 40 60 f Source-Drain Reverse Recovery Time t I = - 1.0 A, dI/dt = 100 A/s 30 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20.0 20.0 V = 5 thru 3 V T = - 55 C GS C 25 C 16.0 16.0 2.5 V 125 C 12.0 12.0 8.0 8.0 2.0 V 4.0 4.0 1.5 V 0.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) DS V - Gate-to-Source Voltage (V) GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72772 2 S-81221-Rev. B, 02-Jun-08 I - Drain Current (A) D I - Drain Current (A) D