SiA441DJ Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET a 0.047 at V = - 10 V - 12 GS Thermally Enhanced PowerPAK - 40 11 nC a 0.065 at V = - 4.5 V SC-70 Package GS - 12 - Small Footprint Area - Low On-Resistance PowerPAK SC-70-6L-Single 100 % R and UIS Tested g S Compliant to RoHS Directive 2002/95/EC 1 APPLICATIONS D Portable and Consumer Devices 2 D - Load Switch G 3 - DC/DC Converter G - Motor Drive D 6 - High-Side Switch in Half- and Full-Bridge Converters S D 5 Marking Code S 2.05 mm 2.05 mm D 4 B O X P-Channel MOSFET Part code X X X Lot Traceability and Date code Ordering Information: SiA441DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 40 DS V Gate-Source Voltage V 20 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 6.6 A b, c T = 70 C - 5.3 A A Pulsed Drain Current (t = 300 s) I - 30 DM a T = 25 C - 12 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 2.9 A Avalanche Current I 13 AS L = 0.1 mH Single Pulse Avalanche Energy E mJ 8.5 AS T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 28 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 C/W. Document Number: 63277 www.vishay.com S11-1183-Rev. A, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA441DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0, I = - 250 A Drain-Source Breakdown Voltage - 40 V DS GS D V Temperature Coefficient V /T - 29 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 4.4 A 0.039 0.047 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 3.7 A 0.053 0.065 GS D a g V = - 15 V, I = - 4.4 A 13 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 890 iss Output Capacitance C V = - 20 V, V = 0 V, f = 1 MHz 115 pF oss DS GS C Reverse Transfer Capacitance 95 rss V = - 20 V, V = - 10 V, I = - 4.9 A 22 35 DS GS D Q Total Gate Charge g 11 17 nC Q Gate-Source Charge V = - 20 V, V = - 4.5 V, I = - 4.9 A 2.9 gs DS GS D Q Gate-Drain Charge 5.2 gd R Gate Resistance f = 1 MHz 1.4 7.2 14.4 g t Turn-On Delay Time 40 80 d(on) t Rise Time V = - 20 V, R = 5.1 30 60 r DD L I - 3.9 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 30 60 d(off) Fall Time t 12 25 f ns t Turn-On Delay Time 715 d(on) Rise Time t 12 25 V = - 20 V, R = 5.1 r DD L I - 3.9 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 30 60 d(off) Fall Time t 10 20 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 12 S C A I Pulse Diode Forward Current - 30 SM V I = - 3.9 A, V = 0 V Body Diode Voltage - 0.8 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 50 ns rr Q Body Diode Reverse Recovery Charge 22 50 nC rr I = - 3.9 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 17 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63277 2 S11-1183-Rev. A, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000