SIHA22N60AEL-GE3 Vishay

SIHA22N60AEL-GE3 electronic component of Vishay
SIHA22N60AEL-GE3 Vishay
SIHA22N60AEL-GE3 MOSFETs
SIHA22N60AEL-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SIHA22N60AEL-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHA22N60AEL-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SIHA22N60AEL-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
Datasheet: SIHA22N60AEL-GE3 Datasheet (PDF)
Price (USD)
1: USD 4.5287 ea
Line Total: USD 4.53 
Availability : 0
  
QtyUnit Price
1$ 4.5287
10$ 3.3331
100$ 2.6959
500$ 2.4263
1000$ 2.1333
5000$ 2.1215

Availability 0
Ship by Fri. 26 Sep to Thu. 02 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.9761
10$ 6.8223
30$ 6.4486
100$ 6.3466


Availability 0
Ship by Wed. 24 Sep to Fri. 26 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.5287
10$ 3.3331
100$ 2.6959
500$ 2.4263
1000$ 2.1333
5000$ 2.1215

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIHA22N60AEL-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHA22N60AEL-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHA22N60AEL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 S D G N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 650 DS J Power factor correction power supplies (PFC) R typ. () at 25 C V = 10 V 0.155 DS(on) GS Lighting Q max. (nC) 82 g - High-intensity discharge (HID) Q (nC) 20 gs - Fluorescent ballast lighting Q (nC) 13 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Thin-lead TO-220 FULLPAK Lead (Pb)-free and halogen-free SiHA22N60AEL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 21 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 13 A C a Pulsed drain current I 48 DM Linear derating factor 1.7 W/C b Single pulse avalanche energy E 183 mJ AS Maximum power dissipation P 35 W D Operating junction and storage temperature range T , T -55 to +150 C J stg d Reverse diode dv/dt dv/dt 50 V/ns c Soldering recommendations (peak temperature) For 10 s 260 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 3.6 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S18-0347-Rev. A, 26-Mar-18 Document Number: 92082 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA22N60AEL www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -3.6 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.68 - V/C DS DS J D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 11 A - 0.155 0.180 DS(on) GS D Forward transconductance g V = 8 V, I = 11 A - 16 - S fs DS D Dynamic Input capacitance C - 1757 - iss V = 0 V, GS Output capacitance C V = 100 V, -74 - oss DS f = 1 MHz Reverse transfer capacitance C -6 - rss pF Effective output capacitance, energy C -48 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 257 - o(tr) b related Total gate charge Q -41 82 g Gate-source charge Q V = 10 V I = 11 A, V = 480 V -10 - nC gs GS D DS Gate-drain charge Q -13 - gd Turn-on delay time t -27 54 d(on) Rise time t -24 48 r V = 480 V, I = 11 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t GS g -86 172 d(off) Fall time t -28 56 f Gate input resistance R f = 1 MHz, open drain 3.6 7.2 14.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 21 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 48 S SM Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 285 570 ns rr T = 25 C, I = I = 11 A, J F S Reverse recovery charge Q -4.1 8.2 C rr di/dt = 100 A/s, V = 400 V R Reverse recovery current I -27 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S18-0347-Rev. A, 26-Mar-18 Document Number: 92082 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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