IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Available Repetitive Avalanche Rated R ( )V = 10 V 0.16 DS(on) GS RoHS* 175 C Operating Temperature Q (Max.) (nC) 26 g COMPLIANT Fast Switching Q (nC) 5.5 gs Ease of Paralleling Q (nC) 11 gd Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF530PbF Lead (Pb)-free SiHF530-E3 IRF530 SnPb SiHF530 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 14 C Continuous Drain Current V at 10 V I GS D T = 100 C 10 A C a Pulsed Drain Current I 56 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 69 mJ AS a Repetitive Avalanche Current I 14 A AR a Repetitive Avalanche Energy E 8.8 mJ AR Maximum Power Dissipation T = 25 C P 88 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 528 H, R = 25 , I = 14 A (see fig. 12). DD J g AS c. I 14 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91019 www.vishay.com S11-0510-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF530, SiHF530 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 8.4 A -- DS(on) GS D 0.16 b Forward Transconductance g V = 50 V, I = 8.4 A 5.1 - - fs DS D S Dynamic V = 0 V, Input Capacitance C - 670 - GS iss Output Capacitance C -V = 25 V, 250- pF oss DS Reverse Transfer Capacitance C -60- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 26 g I = 14 A, V = 80 V, D DS Gate-Source Charge Q --V = 10 V 5.5 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -10 - d(on) Rise Time t -34 - r V = 50 V, I = 14 A DD D ns b R = 12 , R = 3.6 , see fig. 10 g D Turn-Off Delay Time t -23- d(off) Fall Time t -24- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 14 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 56 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 14 A, V = 0 V 2.5 V J S GS Body Diode Reverse Recovery Time t - rr 150 280 ns b T = 25 C, I = 14 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 0.85 1.7 C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91019 2 S11-0510-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000