SiHH28N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Pin 4 Completely lead (Pb)-free device PowerPAK 8 x 8 Low figure-of-merit (FOM) R x Q on g Pin 1 Low input capacitance (C ) iss 4 Reduced switching and conduction losses Pin 2 1 Ultra low gate charge (Q ) g 2 Avalanche energy rated (UIS) 3 3 Pin 3 Kelvin connection for reduced gate noise N-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS V (V) at T max. 650 DS J Server and telecom power supplies R typ. () at 25 C V = 10 V 0.085 DS(on) GS Switch mode power supplies (SMPS) Q max. (nC) 129 g Power factor correction power supplies (PFC) Q (nC) 20 gs Q (nC) 44 Lighting gd Configuration Single - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package PowerPAK 8 x 8 Lead (Pb)-free and halogen-free SiHH28N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 29 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 19 A C a Pulsed drain current I 76 DM Linear derating factor 1.6 W/C b Single pulse avalanche energy E 353 mJ AS Maximum power dissipation P 202 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns c Reverse diode dV/dt 13 Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5 A DD J g AS c. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S17-0780-Rev. C, 22-May-17 Document Number: 91932 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHH28N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R 38 50 thJA C/W Maximum junction-to-case (Drain) 0.48 0.62 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 10 mA - 0.58 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 14 A - 0.085 0.098 DS(on) GS D Forward transconductance g V = 30 V, I = 14 A - 7.6 - S fs DS D Dynamic Input capacitance C -2614- iss V = 0 V, GS Output capacitance C -1V = 100 V, 25- oss DS f = 1 MHz Reverse transfer capacitance C -5- rss pF Effective output capacitance, energy C -86 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C -444 - o(tr) b related Total gate charge Q - 86 129 g Gate-source charge Q -2V = 10 V I = 10 A, V = 480 V0- nC gs GS D DS Gate-drain charge Q -44- gd Turn-on delay time t -29 58 d(on) Rise time t - 75 113 r V = 480 V, I = 14 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -GS g 84126 d(off) Fall time t -5481 f Gate input resistance R f = 1 MHz 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 29 S showing the A G integral reverse Pulsed diode forward current I -- 76 SM p - n junction diode S Diode forward voltage V T = 25 C, I = 14 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 386 772 ns rr T = 25 C, I = I = 14 A, J F S Reverse recovery charge Q - 6 12 C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -25 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S17-0780-Rev. C, 22-May-17 Document Number: 91932 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000