SiR462DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET a 0.0079 at V = 10 V 100 % R Tested GS 30 g 30 8.8 nC 100 % UIS Tested a 0.010 at V = 4.5 V 30 GS APPLICATIONS PowerPAK SO-8 High-Side Switch Server, VRM, POL S 6.15 mm 5.15 mm DC/DC 1 D S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: SiR462DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 30 C a T = 70 C 30 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 18.9 A A b, c T = 70 C 15.1 A Pulsed Drain Current I 70 DM Avalanche Current I 31 AS L = 0.1 mH Avalanche Energy E mJ 48 AS a T = 25 C 30 C Continuous Source-Drain Diode Current I A S b, c T = 25 C 4 A T = 25 C 41.7 C T = 70 C 26.7 C Maximum Power Dissipation P W D b, c T = 25 C 4.8 A b, c T = 70 C 3.1 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 21 26 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.4 3.0 thJC Notes: a. Based on T = 25 C. Package limited. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (SiR462DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 32 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 5.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a On-State Drain Current I V 5 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 20 A 0.0065 0.0079 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 14 A 0.0082 0.010 GS D a g V = 15 V, I = 20 A Forward Transconductance 70 S fs DS D b Dynamic Input Capacitance C 1155 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 260 pF oss DS GS Reverse Transfer Capacitance C 95 rss V = 15 V, V = 10 V, I = 20 A 20 30 DS GS D Q Total Gate Charge g 8.8 14 nC Gate-Source Charge Q 3.5 V = 15 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 2.2 gd Gate Resistance R f = 1 MHz 0.2 1.0 2.0 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 15 V, R = 15 15 25 r DD L I 1.0 A, V = 4.5 V, R = 17 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 14 20 d(on) t Rise Time V = 15 V, R = 15 915 r DD L I 1.0 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 25 40 d(off) t Fall Time 915 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 30 S C A I Pulse Diode Forward Current 70 SM Body Diode Voltage V I = 4.0 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 21 42 ns rr Body Diode Reverse Recovery Charge Q 15 30 nC rr I = 4.0 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12.6 a ns Reverse Recovery Rise Time t 8.4 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68823 2 S-82771-Rev. C, 17-Nov-08