New Product SiS780DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g Definition D SkyFET Monolithic TrenchFET Gen III a 0.0135 at V = 10 V GS 18 30 7.3 nC Power MOSFET and Schottky Diode a 0.0175 at V = 4.5 V GS 18 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Notebook PC S 3.30 mm 3.30 mm - System Power, Memory 1 S 2 Buck Converter S 3 Synchronous Rectifier Switch G 4 D D 8 D 7 D 6 D Schottky 5 G Diode Bottom View N-Channel MOSFET Ordering Information: S SiS780DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V 30 Drain-Source Voltage DS V Gate-Source Voltage V 20 GS a T = 25 C C 18 a T = 70 C 18 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 12 A b, c T = 70 C A 9.5 A I 50 Pulsed Drain Current (t = 300 s) DM a T = 25 C C 18 I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.9 Single Pulse Avalanche Current I 15 AS L = 0.1 mH E 11.25 Single Pulse Avalanche Energy mJ AS T = 25 C 27.7 C T = 70 C 17.7 C P Maximum Power Dissipation W D b, c T = 25 C A 3.5 b, c T = 70 C 2.2 A T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 29 36 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 3.6 4.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 C/W. Document Number: 67941 www.vishay.com S11-1178-Rev. A, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiS780DN Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0, I = 250 A Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 250 A Gate-Source Threshold Voltage 12.3 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.017 0.150 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C 110 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0110 0.0135 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0145 0.0175 GS D a g V = 15 V, I = 15 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 722 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 194 pF oss DS GS C Reverse Transfer Capacitance 64 rss V = 15 V, V = 10 V, I = 10 A 16.3 24.5 DS GS D Total Gate Charge Q g 7.3 11 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 2.2 gs DS GS D Q Gate-Drain Charge 2 gd R Gate Resistance f = 1 MHz 0.3 1.1 2.2 g t Turn-On Delay Time 918 d(on) t Rise Time V = 15 V, R = 1.5 18 35 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 10 20 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 714 d(on) Rise Time t 11 22 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 14 28 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 18 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 1 A 0.42 0.53 V SD S t Body Diode Reverse Recovery Time 14.5 29 ns rr Body Diode Reverse Recovery Charge Q 510 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 7.5 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67941 2 S11-1178-Rev. A, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000