X-On Electronics has gained recognition as a prominent supplier of SISA12ADN-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SISA12ADN-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SISA12ADN-T1-GE3 Vishay

SISA12ADN-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SISA12ADN-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: Vishay Semiconductors MOSFET 30V 4.3mOhm10V 25A N-Ch
Datasheet: SISA12ADN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8061 ea
Line Total: USD 0.81

Availability - 17968
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3592 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 0.658
10 : USD 0.5284
30 : USD 0.4741
100 : USD 0.4053
500 : USD 0.3739
1000 : USD 0.355

17968 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.6659
100 : USD 0.498
500 : USD 0.4278
1000 : USD 0.3749
3000 : USD 0.3358
6000 : USD 0.3289
9000 : USD 0.3186
24000 : USD 0.3162

2910 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 82
Multiples : 1
82 : USD 0.5119
100 : USD 0.4696
200 : USD 0.4567
500 : USD 0.4387
1000 : USD 0.4225
3000 : USD 0.3997

808 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 247
Multiples : 1
247 : USD 0.4309
250 : USD 0.4137
500 : USD 0.3987

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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We are delighted to provide the SISA12ADN-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SISA12ADN-T1-GE3 and other electronic components in the MOSFET category and beyond.

The Vishay Semiconductors SISA12ADN-T1-GE3 is a MOSFET with an N-channel configuration and 30V drain-source breakdown voltage. This MOSFET is capable of 4.3mOhm10V resistance and 25A current rating. It is an ideal device for use in battery-operated high-speed switching applications such as DC/DC converters. This part is manufactured by Vishay and is an industry recognized part used in a variety of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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