SM8S17AHE3_A/I

SM8S10A thru SM8S43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Junction passivation optimized design passivated anisotropic rectifier technology T = 175 C capability suitable for high reliability J and automotive requirement Available in uni-directional polarity only Low leakage current Low forward voltage drop DO-218AB High surge capability Meets ISO7637-2 surge specification (varied by test condition) Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 11.1 V to 52.8 V BR TYPICAL APPLICATIONS V 10 V to 43 V WM P (10 x 1000 s) 6600 W Use in sensitive electronics protection against voltage PPM transients induced by inductive load switching and lighting, P (10 x 10 000 s) 5200 W PPM especially for automotive load dump protection application. P 8 W D I 700 A FSM MECHANICAL DATA T max. 175 C J Case: DO-218AB Polarity Uni-directional Molding compound meets UL 94 V-0 flammability rating Package DO-218AB Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified (X denotes revision code e.g. A, B, ...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: heatsink is anode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUEUNIT with 10/1000 s waveform 6600 Peak pulse power dissipation P W PPM with 10/10 000 s waveform 5200 Power dissipation on infinite heatsink at T = 25 C (fig. 1) P 8.0 W C D (1) Peak pulse current with 10/1000 s waveform I See next table A PPM Peak forward surge current 8.3 ms single half sine-wave I 700 A FSM Operating junction and storage temperature range T , T -55 to +175 C J STG Note (1) Non-repetitive current pulse derated above T = 25 C A Revision: 06-Dec-2018 Document Number: 88387 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SM8S10A thru SM8S43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C BREAKDOWN MAXIMUM TYPICAL TEMP. MAXIMUM MAX. PEAK MAXIMUM VOLTAGE TEST STAND-OFF REVERSE COEFFICIENT REVERSE PULSE CURRENT CLAMPING DEVICE V (V) CURRENT VOLTAGE LEAKAGE BR (1) LEAKAGE AT 10/1000 s VOLTAGE OF V BR TYPE I V AT V T WM WM AT V WAVEFORM AT I T WM PPM (mA) (V) T = 175 C J MIN. NOM. MAX. I (A) (A) V (V) D C (%/C) I (A) D SM8S10A 11.1 11.7 12.3 5.0 10.0 15 250 388 17.0 0.069 SM8S11A 12.2 12.9 13.5 5.0 11.0 10 150 363 18.2 0.072 SM8S12A 13.3 14.0 14.7 5.0 12.0 10 150 332 19.9 0.074 SM8S13A 14.4 15.2 15.9 5.0 13.0 10 150 307 21.5 0.076 SM8S14A 15.6 16.4 17.2 5.0 14.0 10 150 284 23.2 0.078 SM8S15A 16.7 17.6 18.5 5.0 15.0 10 150 270 24.4 0.080 SM8S16A 17.8 18.8 19.7 5.0 16.0 10 150 254 26.0 0.081 SM8S17A 18.9 19.9 20.9 5.0 17.0 10 150 239 27.6 0.082 SM8S18A 20.0 21.1 22.1 5.0 18.0 10 150 226 29.2 0.083 SM8S20A 22.2 23.4 24.5 5.0 20.0 10 150 204 32.4 0.085 SM8S22A 24.4 25.7 26.9 5.0 22.0 10 150 186 35.5 0.086 SM8S24A 26.7 28.1 29.5 5.0 24.0 10 150 170 38.9 0.087 SM8S26A 28.9 30.4 31.9 5.0 26.0 10 150 157 42.1 0.088 SM8S28A 31.1 32.8 34.4 5.0 28.0 10 150 145 45.4 0.089 SM8S30A 33.3 35.1 36.8 5.0 30.0 10 150 136 48.4 0.090 SM8S33A 36.7 38.7 40.6 5.0 33.0 10 150 124 53.3 0.091 SM8S36A 40.0 42.1 44.2 5.0 36.0 10 150 114 58.1 0.091 SM8S40A 44.4 46.8 49.1 5.0 40.0 10 150 102 64.5 0.092 SM8S43A 47.8 50.3 52.8 5.0 43.0 10 150 95.1 69.4 0.093 Notes For all types maximum V = 1.8 V at I = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses F F per minute maximum (1) To calculate V vs. junction temperature, use the following formula: V at T = V at 25 C x (1 + T x (T - 25)) BR BR J BR J THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to case R 0.90 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 13 diameter plastic tape and reel, (1) SM8S10AHE3 A/I 2.605 I 750 anode towards the sprocket hole Note (1) AEC-Q101 qualified Revision: 06-Dec-2018 Document Number: 88387 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000