SQ1922AEEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET FEATURES SOT-363 TrenchFET power MOSFET SC-70 Dual (6 leads) S 2 AEC-Q101 qualified 4 G 2 100 % R tested g 5 D 1 Typical ESD protection: 800 V 6 Material categorization: for definitions of compliance please see 3 www.vishay.com/doc 99912 D 2 2 D D 1 2 G 1 1 S 1 Top View Marking Code: 8T G G 1 2 PRODUCT SUMMARY V (V) 20 DS R ( ) at V = 4.5 V 0.300 DS(on) GS I (A) per leg 0.85 D Configuration Dual S S 1 2 Package SC-70 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 20 DS V Gate-source voltage V 12 GS T = 25 C 0.85 C a Continuous drain current I D T = 125 C 0.53 C a Continuous source current (diode conduction) I 0.63 A S b Pulsed drain current I 3.3 DM Single Pulse Avalanche Current I 2 AS L = 0.1 mH Single Pulse Avalanche Energy E 0.2 mJ AV T = 25 C 1.5 C b Maximum power dissipation P W D T = 125 C 0.5 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 460 thJA C/W Junction-to-foot (drain) R 350 thJF Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S18-1111-Rev. A, 12-Nov-2018 Document Number: 76699 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQ1922AEEH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 20 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D V = 0 V, V = 3 V - - 1 A DS GS Gate-source leakage I GSS V = 0 V, V = 12 V - - 10 mA DS GS V = 0 V V = 20 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 20 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 20 V, T = 175 C - - 150 GS DS J a On-state drain current I V = 4.5 V V 5 V 0.4 - - A D(on) GS DS V = 4.5 V I = 0.4 A - 0.210 0.300 GS D a Drain-source on-state resistance R V = 4.5 V I = 0.4 A, T = 125 C - - 0.490 DS(on) GS D J V = 4.5 V I = 0.4 A, T = 175C - - 0.530 GS D J b Dynamic Input capacitance C -60 - iss Output capacitance C V = 0 V V = 10 V, f = 1 MHz -26 - pF oss GS DS Reverse transfer capacitance C -15 - rss c Total gate charge Q -0.9 1.2 g c Gate-source charge Q V = 4.5 V V = 10 V, I = 1.2 A -0.5 - nC gs GS DS D c Gate-drain charge Q -0.3 - gd d Gate resistance R f = 1 MHz 5 8.5 13.5 g c Turn-on delay time t -10 15 d(on) c Rise time t -9.6 15 r V = 10 V, R = 20 DD L ns c I 0.5 A, V = 4.5 V, R = 1 D GEN g Turn-off delay time t -8 12 d(off) c Fall time t -6 10 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 3 A SM Forward voltage V I = 0.5 A, V = 0 - 0.8 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature d. Gate is obscured by ESD network series resistance and cannot be tested directly Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1111-Rev. A, 12-Nov-2018 Document Number: 76699 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000