SQ2315ES www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 C MOSFET FEATURES SOT-23 (TO-236) TrenchFET power MOSFET c AEC-Q101 qualified D 100 % R and UIS tested g 3 Material categorization: for definitions of compliance please se e www.vishay.com/doc 99912 2 S S 1 G Top View G Marking Code: 8D PRODUCT SUMMARY V (V) -12 DS R () at V = -4.5 V 0.050 P-Channel MOSFET DS(on) GS R () at V = -2.5 V 0.068 DS(on) GS D R () at V = -1.8 V 0.100 DS(on) GS I (A) -5 D Configuration Single ORDERING INFORMATION Package SOT-23 SQ2315ES Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79771) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -12 DS V Gate-source voltage V 8 GS T = 25 C -5 C Continuous drain durrent I D T = 125 C -3 C Continuous source current (diode conduction) I -2.5 A S a Pulsed drain current I -20 DM Single pulse avalanche current I -11 AS L = 0.1 mH Single pulse avalanche energy E 6mJ AS T = 25 C 2 C a Maximum power dissipation P W D T = 125 C 0.67 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-ambient PCB mount R 175 thJA C/W Junction-to-foot (drain) R 75 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. When mounted on 1 square PCB (FR4 material) c. Parametric verification ongoing. S21-1074-Rev. E, 15-Nov-2021 Document Number: 71507 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ2315ES www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -12 - - DS GS D V Gate-source threshold voltage V V = V , I = -250 A -0.45 - -1 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 0 V V = -12 V - - -1 GS DS Zero gate voltage drain current I V = 0 V V = -12 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -12 V, T = 175 C - - -150 GS DS J a On-state drain current I V = -4.5 V V -5 V -10 - - A D(on) GS DS V = -4.5 V I = -3.5 A - 0.042 0.050 GS D V = -4.5 V I = -3.5 A, T = 125 C - - 0.066 GS D J a Drain-source on-state resistance R V = -4.5 V I = -3.5 A, T = 175 C - - 0.075 DS(on) GS D J V = -2.5 V I = -3 A - 0.059 0.068 GS D V = -1.8 V I = -2 A - 0.084 0.100 GS D b Forward transconductance g V = -5 V, I = -1.6 A - 7 - S fs DS D b Dynamic Input capacitance C - 695 870 iss Output capacitance C -V = 0 V V = -6 V, f = 1 MHz265335 pF oss GS DS Reverse transfer capacitance C -190240 rss c Total gate charge Q -9 13 g c Gate-source charge Q -1V = -4.5 V V = -6 V, I = -3.85 A- nC gs GS DS D c Gate-drain charge Q -2.4- gd Gate resistance R f = 1 MHz 2.4 4.9 12.3 g c Turn-on delay time t -17 26 d(on) c Rise time t -19 29 r V = -6 V, R = 1.6 DD L ns c I -3.85 A, V = -4.5 V, R = 1 D GEN g Turn-off delay time t -2842 d(off) c Fall time t -1320 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- -20 A SM Forward voltage V I = -2 A, V = 0 V - -0.8 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1074-Rev. E, 15-Nov-2021 Document Number: 71507 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000