6.156.15 mmmm SQJ560EP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Dual TrenchFET power MOSFET AEC-Q101 qualified D 1 100 % R and UIS tested g Material categorization: D 2 for definitions of compliance please see 1 www.vishay.com/doc 99912 S 2 1 G 1 3 S 2 4 D S 1 2 11 G 2 Top View Bottom View G 2 G 1 PRODUCT SUMMARY N-CHANNEL P-CHANNEL V (V) 60 -60 DS R ( ) at V = 10 V 0.0120 0.0526 DS(on) GS S D 1 2 R ( ) at V = 4.5 V 0.0160 0.0755 DS(on) GS N-Channel MOSFET P-Channel MOSFET I (A) 30 -18 D Configuration N- and p-pair Package PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT Drain-source voltage V 60 -60 DS V Gate-source voltage V 20 GS a T = 25 C 30 -18 C Continuous drain current I D T = 125 C 24.6 -10.3 C a Continuous source current (diode conduction) I 30 -30 A S b Pulsed drain current I 120 -50 DM Single pulse avalanche current I 23 -24 AS L = 0.1 mH Single pulse avalanche Energy E 26.4 28.8 mJ AS T = 25 C 34 34 C b Maximum power dissipation P W D T = 125 C 11 11 C Operating junction and storage temperature range T , T -55 to +175 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT c Junction-to-ambient PCB mount R 85 85 thJA C/W Junction-to-case (drain) R 4.3 4.3 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S18-0386-Rev. A, 09-Apr-18 Document Number: 76266 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.13 m5.13 mmmSQJ560EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0 V, I = 250 A N-Ch 60 - - GS D Drain-source breakdown voltage V DS V = 0 V, I = -250 A P-Ch -60 - - GS D V V = V , I = 250 A N-Ch 1.5 2 2.5 DS GS D Gate-source threshold voltage V GS(th) V = V , I = -250 A P-Ch -1.5 -2 -2.5 DS GS D N-Ch - - 100 Gate-source leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 0 V V = 60 V N-Ch - - 1 GS DS V = 0 V V = -60 V P-Ch - - -1 GS DS V = 0 V V = 60 V, T = 125 C N-Ch - - 50 GS DS J Zero gate voltage drain current I A DSS V = 0 V V = -60 V, T = 125 C P-Ch - - -50 GS DS J V = 0 V V = 60 V, T = 175 C N-Ch - - 150 GS DS J V = 0 V V = -60 V, T = 175 C P-Ch - - -150 GS DS J V = 10 V V 5 V N-Ch 10 - - GS DS a On-state drain current I A D(on) V = -10 V V 5 V P-Ch -10 - - GS DS V = 10 V I = 10 A N-Ch - 0.0099 0.0120 GS D V = -10 V I = -10 A P-Ch - 0.0432 0.0526 GS D V = 10 V I = 10 A, T = 125 C N-Ch - - 0.0164 GS D J V = -10 V I = -10 A, T = 125 C P-Ch - - 0.0872 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 10 A, T = 175 C N-Ch - - 0.0185 GS D J V = -10 V I = -10 A, T = 175 C P-Ch - - 0.1072 GS D J V = 4.5 V I = 8 A N-Ch - 0.0133 0.0160 GS D V = -4.5 V I = -8 A P-Ch - 0.0628 0.0755 GS D V = 15 V, I = 10 A N-Ch - 56 - DS D b Forward transconductance g S fs V = -15 V, I = -10 A P-Ch - 16 - DS D b Dynamic V = 0 V V = 25 V, f = 1 MHz N-Ch - 1205 1650 GS DS Input capacitance C iss V = 0 V V = -25 V, f = 1 MHz P-Ch - 1195 1650 GS DS V = 0 V V = 25 V, f = 1 MHz N-Ch - 560 800 GS DS Output capacitance C pF oss V = 0 V V = -25 V, f = 1 MHz P-Ch - 162 250 GS DS V = 0 V V = 25 V, f = 1 MHz N-Ch - 29 42 GS DS Reverse transfer capacitance C rss V = 0 V V = -25 V, f = 1 MHz P-Ch - 102 150 GS DS V = 10 V V = 30 V, I = 10 A N-Ch - 18 30 GS DS D c Total gate charge Q g V = -10 V V = -30 V, I = -10 A P-Ch - 29 45 GS DS D V = 10 V V = 30 V, I = 10 A N-Ch - 4 - GS DS D nC c Gate-source charge Q gs V = -10 V V = -30 V, I = -10 A P-Ch - 5 - GS DS D V = 10 V V = 30 V, I = 10 A N-Ch - 2 - GS DS D c Gate-drain charge Q gd V = -10 V V = -30 V, I = -10 A P-Ch - 7 - GS DS D N-Ch 0.23 0.46 0.70 Gate resistance R f = 1 MHz g P-Ch 1.02 2.06 3.10 S18-0386-Rev. A, 09-Apr-18 Document Number: 76266 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000