The Vishay SQM10250E_GE3 is a MOSFET device with a maximum voltage rating of 250 volts on the drain-to-source (Vds) and a maximum voltage rating of 20 volts on the gate-to-source (Vgs). It is manufactured in a TO-263 package, which offers a footprint size with improved thermal management for more efficient power dissipation. The SQM10250E_GE3 is a P-Channel MOSFET and is optimized for low on-state resistance, high efficiency, and high reliability. It is suitable for use in switching/regulating applications, as well as in a variety of other high-frequency circuits.