SQM40031EL www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-263 S TrenchFET power MOSFET Package with low thermal resistance 100 % R and UIS tested g G AEC-Q101 qualified Material categorization: for definitions of compliance please see SS DD www.vishay.com/doc 99912 D GG Top View P-Channel MOSFET PRODUCT SUMMARY V (V) -40 DS R ( ) at V = -10 V 0.00300 DS(on) GS R ( ) at V = -4.5 V 0.00380 DS(on) GS I (A) -120 D Configuration Single Package TO-263 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -40 DS V Gate-Source Voltage V 20 GS T = 25 C -120 C a Continuous Drain Current I D T = 125 C -120 C a Continuous Source Current (Diode conduction) I -120 A S b Pulsed Drain Current I -300 DM Single Pulse Avalanche Current I -60 AS L = 0.1 mH Single Pulse Avalanche Energy E 180 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S17-0071-Rev. A, 23-Jan-17 Document Number: 70297 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM40031EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -40 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -40 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -40 V, T = 175 C - - -450 GS DS J a On-State Drain Current I V = -10 V V -5 V -100 - - A D(on) GS DS V = -10 V I = -30 A - 0.00250 0.00300 GS D V = -10 V I = -30 A, T = 125 C - - 0.00440 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V I = -30 A, T = 175 C - - 0.00520 GS D J V = -4.5 V I = -25 A - 0.00316 0.00380 GS D b Forward Transconductance g V = -15 V, I = -25 A - 123 - S fs DS D b Dynamic Input Capacitance C - 30 000 39 000 iss Output Capacitance C -V = 0 V V = -25 V, f = 1 MHz18502500 pF oss GS DS Reverse Transfer Capacitance C -15502100 rss c Total Gate Charge Q - 527 800 g c Gate-Source Charge Q -8V = -10 V V = -20 V, I = -80 A9- nC gs GS DS D c Gate-Drain Charge Q -100- gd Gate Resistance R f = 1 MHz 1 2.26 3.5 g c Turn-On Delay Time t -21 35 d(on) c Rise Time t -30 50 r V = -20 V, R = 0.3 DD L ns I -80 A, V = -10 V, R = 1 c D GEN g Turn-Off Delay Time t -250400 d(off) c Fall Time t -165300 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- -300 A SM Forward Voltage V I = -80 A, V = 0 V - -0.85 -1.5 V SD F GS Body diode reverse recovery time t - 70 140 ns rr Body diode reverse recovery charge Q - 134 270 nC rr I = -50 A, di/dt = 100 A/s F Reverse recovery fall time t -43 - a ns Reverse recovery rise time t -35 - b Body diode peak reverse recovery I --4 -8 A RM(REC) current Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0071-Rev. A, 23-Jan-17 Document Number: 70297 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000