3.3 mm3.3 mm SQS482ENW www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PowerPAK 1212-8W Single D TrenchFET power MOSFET D 8 DD d 77 AEC-Q101 qualified DD 66 55 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 11 22 SS 33 SS D 44 SS 1 G Top View Bottom View Marking code: Q034 PRODUCT SUMMARY G V (V) 30 DS R ( ) at V = 10 V 0.0085 DS(on) GS R ( ) at V = 4.5 V 0.0100 DS(on) GS I (A) 16 D S Configuration Single N-Channel MOSFET Package PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 30 DS V Gate-source voltage V 20 GS T = 25 C 16 C a Continuous drain current I D T = 125 C 16 C a Continuous source current (diode conduction) I 16 A S b Pulsed drain current I 64 DM Single pulse avalanche current I 31 AS L = 0.1 mH Single pulse avalanche energy E 48 mJ AS T = 25 C 62 C b Maximum power dissipation P W D T = 125 C 20 C Operating junction and storage temperature range T , T -55 to +175 J stg C e, f Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 81 thJA C/W Junction-to-case (drain) R 2.4 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. Parametric verification ongoing e. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-1217-Rev. A, 07-Aug-17 Document Number: 75543 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 3.3 mm3 mm SQS482ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 30 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 30 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 30 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 30 V, T = 175 C - - 150 GS DS J a On-state drain current I V = 10 V V 5 V 20 - - A D(on) GS DS V = 10 V I = 16.4 A - 0.0070 0.0085 GS D V = 10 V I = 16.4 A, T = 125 C - - 0.0135 GS D J a Drain-source on-state resistance R DS(on) V = 10 V I = 16.4 A, T = 175 C - - 0.0160 GS D J V = 4.5 V I = 16.4 A - 0.0080 0.0100 GS D b Forward transconductance g V = 15 V, I = 16.4 A - 70 - S fs DS D b Dynamic Input capacitance C - 1492 1865 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 280 350 pF oss GS DS Reverse transfer capacitance C - 108 135 rss c Total gate charge Q -26 39 g c Gate-source charge Q V = 10 V V = 15 V, I = 10 A -4.7 - nC gs GS DS D c Gate-drain charge Q -4.3 - gd Gate resistance R f = 1 MHz 5 10 20 g c Turn-on delay time t -7 11 d(on) c Rise time t -21 32 V = 15 V, R = 3 r DD L ns c I 5 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -49 74 d(off) c Fall Time t -18 27 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 64 A SM Forward voltage V I = 15 A, V = 0 - 0.82 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1217-Rev. A, 07-Aug-17 Document Number: 75543 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000