SUD19N20-90 Vishay Siliconix N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) DS DS(on) D 175 C Junction Temperature 0.090 at V = 10 V 19 GS PWM Optimized 200 0.105 at V = 6 V 17.5 GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch T O-252 D Drain Connected to T a b G GD S T op V i e w S Ordering Information: SUD19N20-90-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage 200 DS V Gate-Source Voltage V 20 GS T = 25 C 19 C b I Continuous Drain Current (T = 175 C) D J T = 125 C 11 C I Pulsed Drain Current 40 A DM I Continuous Source Current (Diode Conduction) 19 S Avalanche Current I 19 AS E Single Pulse Avalanche Energy L = 0.1 mH 18 mJ AS b T = 25 C C 136 Maximum Power Dissipation P W D a = 25 C T A 3 T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 15 18 a R Junction-to-Ambient thJA Steady State 40 50 C/W R Junction-to-Case (Drain) 0.85 1.1 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. See SOA curve for voltage derating. Document Number: 71767 www.vishay.com S10-2245-Rev. E, 04-Oct-10 1SUD19N20-90 Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J a Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 DS GS D V V V = V , I = 250 A Gate Threshold Voltage 24 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 200 V, V = 0 V 1 DS GS I V = 200 V, V = 0 V, T = 125 C Zero Gate Voltage Drain Current 50 A DSS DS GS J V = 200 V, V = 0 V, T = 175 C 250 DS GS J b I V = 5 V, V = 10 V On-State Drain Current 40 A D(on) DS GS V = 10 V, I = 5 A 0.075 0.090 GS D V = 10 V, I = 5 A, T = 125 C 0.190 GS D J b R Drain-Source On-State Resistance DS(on) V = 10 V, I = 5 A, T = 175 C 0.260 GS D J V = 6 V, I = 5 A 0.082 0.105 GS D b g V = 15 V, I = 19 A 35 S Forward Transconductance fs DS D a Dynamic C Input Capacitance 1800 iss C V = 0 V, V = 25 V, F = 1 MHz Output Capacitance 180 pF oss GS DS Reverse Transfer Capacitance C 80 rss c Q 34 51 Total Gate Charge g c Q V = 100 V, V = 10 V, I = 19 A Gate-Source Charge 8 nC gs DS GS D c Q 12 Gate-Drain Charge gd R Gate Resistance 0.5 2.9 g c t 15 25 Turn-On Delay Time d(on) c t V = 100 V, R = 5.2 50 75 Rise Time r DD L ns c I 19 A, V = 10 V, R = 2.5 t Turn-Off Delay Time D GEN g 30 45 d(off) c t 60 90 Fall Time f Source-Drain Diode Ratings and Characteristics (T = 25 C) C I 50 A Pulsed Current SM b V I = 19 A, V = 0 V 0.9 1.5 V Diode Forward Voltage SD F GS t I = 19 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 180 250 ns rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71767 2 S10-2245-Rev. E, 04-Oct-10