New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) r () Q (Typ) I (A) DS DS(on) g D RoHS 0.0252 at V = - 10 V - 50 GS COMPLIANT - 80 55 nC 0.029 at V = - 4.5 V - 47 GS TO-252 S G Drain Connected to Tab GD S Top View D Ordering Information: SUD50P08-25L-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 80 DS V V Gate-Source Voltage 20 GS a T = 25 C C - 50 a T = 70 C C - 42.5 Continuous Drain Current (T = 175 C) I J D b, c T = 25 C A - 12.5 b, c T = 70 C A - 10.5 A I Pulsed Drain Current - 40 DM a T = 25 C C - 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A - 6.9 I Avalanche Current - 45 AS L = 0.1 mH E Single-Pulse Avalanche Energy 101 mJ AS T = 25 C 136 C T = 70 C 95 C Maximum Power Dissipation P W D b, c T = 25 C A 8.3 b, c T = 70 C A 5.8 T , T Operating Junction and Storage Temperature Range - 55 to 175 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R Maximum Junction-to-Ambient t 10 sec 15 18 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.85 1.1 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 40 C/W. Document Number: 73443 www.vishay.com S-71660-Rev. B, 06-Aug-07 1New Product SUD50P08-25L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min TypMaxUnit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 80 V DS GS D V Temperature Coefficient V /T - 73 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T - 5.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 80 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 80 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = - 10 V A On-State Drain Current D(on) DS GS V = - 10 V, I = - 12.5 A 0.021 0.0252 GS D a r Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 10.5 A 0.024 0.029 GS D a g V = - 15 V, I = - 12.5 A Forward Transconductance 52 S fs DS D b Dynamic Input Capacitance C 4700 iss C V = - 40 V, V = 0 V, f = 1 MHz Output Capacitance 320 pF oss DS GS Reverse Transfer Capacitance C 235 rss V = - 40 V, V = - 10 V, I = - 12.5 A 105 160 DS GS D Q Total Gate Charge g 55 85 nC Gate-Source Charge Q V = - 40 V, V = - 4.5 V, I = - 12.5 A 16 gs DS GS D Q Gate-Drain Charge 26 gd Gate Resistance R f = 1 MHz 4 g t Turn-On Delay Time 45 70 d(on) t Rise Time V = - 40 V, R = 3.8 220 330 r DD L ns I - 10.5 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 95 145 d(off) t Fall Time 110 165 f t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 40 V, R = 3.8 25 40 r DD L ns I - 10.5 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 105 160 d(off) t Fall Time 100 150 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 50 S C A a I Pulse Diode Forward Current - 40 SM Body Diode Voltage V I = - 10.5 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 55 85 ns rr Body Diode Reverse Recovery Charge Q 110 165 nC rr I = - 10.5 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 37 a ns Reverse Recovery Rise Time t 18 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73443 2 S-71660-Rev. B, 06-Aug-07