Product Information

TCET1114

TCET1114 electronic component of Vishay

Datasheet
Transistor Output Optocouplers Phototransistor Out Single CTR>160-320%

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 4000
Multiples : 4000

Stock Image

TCET1114
Vishay

4000 : USD 0.2347
8000 : USD 0.2233
12000 : USD 0.2233
28000 : USD 0.2233
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Current Transfer Ratio
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Height
Length
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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TCET1110, TCET1110G www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Temperature, 110 C, Rated FEATURES CTR offered in 9 groups Isolation materials according to UL 94 V-O C E 4 Pollution degree 2 3 (DIN/VDE 0110/resp. IEC 60664) Climatic classification 55/100/21 (IEC 60068 part 1) Special construction: therefore, extra low coupling 12 capacity of typical 0.2 pF, high common mode rejection AC Low temperature coefficient of CTR Temperature range - 40 C to + 110 C Rated impulse voltage (transient overvoltage) 17197 4 V = 6 kV IOTM peak Isolation test voltage (partial discharge test voltage) V = 1.6 kV DESCRIPTION pd Rated isolation voltage (RMS includes DC) The TCET1110, TCET1110G consists of a phototransistor V = 600 V IOWM RMS optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package. Rated recurring peak voltage (repetitive) V = 850 V IORM peak Creepage current resistance according to VDE 0303/ APPLICATIONS IEC 60112 comparative tracking index: CTI 175 Circuits for safe protective separation against electrical Thickness through insulation 4 mm shock according to safety class II (reinforced isolation): External creepage distance > 8 mm for appl. class I to IV at mains voltage 300 V Compliant to RoHS Directive 2002/95/EC and in for appl. class I to III at mains voltage 600 V according accordance to WEEE 2002/96/EC to DIN EN 60747-5-2 (VDE 0884), suitable for: - Switch-mode power supplies AGENCY APPROVALS - Line receiver UL1577, file no. E52744, double protection - Computer peripheral interface BSI: EN 60065:2002, EN 60950-1:2006 - Microprocessor system interface DIN EN 60747-5-2 (VDE 0884) FIMKO ORDERING INFORMATION DIP-4 T C E T 1 11 - PART NUMBER PACKAGE OPTION 7.62 mm CTR (%) AGENCY CERTIFIED/PACKAGE 5 mA 10 mA UL, VDE, BSI, FIMKO 50 to 600 63 to 125 100 to 200 160 to 320 DIP-4 TCET1110 TCET1112 TCET1113 TCET1114 DIP-4, 400 mil - - TCET1113G TCET1114G Rev. 2.0, 08-Aug-11 Document Number: 83546 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TCET1110, TCET1110G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V 6V R Forward current I 60 mA F Forward surge current t 10 s I 1.5 A p FSM OUTPUT Collector emitter voltage V 70 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM COUPLER Isolation test voltage (RMS) t = 1 s V 5000 V ISO RMS Operating ambient temperature range T - 40 to + 110 C amb Storage temperature range T - 55 to + 125 C stg (1) Soldering temperature 2 mm from case, 10 s T 260 C sld Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices (DIP). THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation P 70 mW diss T A Output power dissipation P 70 mW diss Maximum LED junction temperature T 125 C CA jmax. Package T C Maximum output die junction temperature T 125 C jmax. EC DC Thermal resistance, junction emitter to board 173 C/W EB T T DE JE JD Thermal resistance, junction emitter to case 149 C/W EC Thermal resistance, junction detector to board 111 C/W DB DB EB Thermal resistance, junction detector to case 127 C/W T DC B Thermal resistance, junction emitter to junction 173 C/W ED detector BA (1) Thermal resistance, board to ambient 197 C/W 19996 BA T A (1) Thermal resistance, case to ambient 4041 C/W CA Notes The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishays Thermal Characteristics of Optocouplers application note. (1) For 2 layer FR4 board (4 x 3 x 0.062 ). Rev. 2.0, 08-Aug-11 Document Number: 83546 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
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