TEMD1000, TEMD1020, TEMD1030, TEMD1040 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS-Compliant FEATURES TEMD1000 TEMD1020 Package type: surface-mount Package form: GW, RGW, yoke, axial TEMD1030 Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 2 Radiant sensitive area (in mm ): 0.23 High radiant sensitivity Daylight blocking filter matched with 870 nm to TEMD1040 950 nm emitters Fast response times Angle of half sensitivity: = 15 18029 Package matches with IR emitter series TSML1000 Floor life: 168 h, MSL 3, according to J-STD-020 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION TEMD1000 series are PIN photodiodes with high speed and APPLICATIONS high radiant sensitivity in black, surface-mount plastic High speed detector for infrared radiation packages with lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters. Infrared remote control and free air data transmission systems, e.g. in combination with TSMLxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) () (nm) ra 0.5 TEMD1000 10 15 790 to 1050 TEMD1020 10 15 790 to 1050 TEMD1030 10 15 790 to 1050 TEMD1040 10 15 790 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD1000 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Reverse gullwing TEMD1020 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Gullwing TEMD1030 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Yoke TEMD1040 Bulk MOQ: 1000 pcs, 1000 pcs/bulk Axial leads Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 75 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s T < 260 C sd Rev. 2.5, 04-Jun-2019 Document Number: 81564 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMD1000, TEMD1020, TEMD1030, TEMD1040 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -1 1.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 - - V R (BR) Reverse dark current V = 10 V, E = 0 I - 1 10 nA R ro Diode capacitance V = 5 V, f = 1 MHz, E = 0 C -1.8 - pF R D 2 E = 1 mW/cm , = 870 nm, V = 5 V I 6.0 10 13.0 A e R ra Reverse light current 2 E = 1 mW/cm , = 950 nm, V = 5 V I -12- A e R ra Temperature coefficient of I V = 5 V, = 870 nm, TK -0.2 - %/K ra R Ira V = 5 V, = 870 nm s() - 0.60 - A/W R Absolute spectral sensitivity V = 5 V, = 950 nm s() - 0.55 - A/W R Angle of half sensitivity - 15 - Wavelength of peak sensitivity -940 - nm p Range of spectral bandwidth - 790 to 1050 - nm 0.5 Rise time V = 10 V, R = 50 , = 820 nm t -4- ns R L r Fall time V = 10 V, R = 50 , = 820 nm t -4- ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 100 100 10 V = 5 V, CE 10 1 = 950 nm V = 10 V R 1 0.1 0.01 0.1 1 10 20 40 60 80 100 16055 E - Irradiance (mW/cm) e 94 8427 T - Ambient Temperature (C) amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 1.4 8 V = 5 V 1.2 R 6 = 950 nm E = 0 f = 1 MHz 1.0 4 0.8 2 0 0.6 20 40 80 100 1 0 60 0.1 10 100 94 8430 94 8416 T - Ambient Temperature (C) V - Reverse Voltage (V) amb R Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.5, 04-Jun-2019 Document Number: 81564 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra, rel I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) C - Diode Capacitance (pF) ra D