TEMD5020X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Reflow Soldering, AEC-Q101 Released FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 2 Radiant sensitive area (in mm ): 4.4 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation 20535 Fast response times Angle of half sensitivity: = 65 Floor life: 72 h, MSL 4, acc. J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Lead (Pb)-free component TEMD5020X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) Compliant to RoHS directive 2002/95/EC and in 2 including the chip with a 4.4 mm sensitive area detecting accordance to WEEE 2002/96/EC visible and near infrared radiation. APPLICATIONS High speed photo detectors PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 TEMD5020X01 35 65 430 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5020X01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 110 C stg Soldering temperature Acc. reflow solder profile fig. 8 T 260 C sd Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm R 350 K/W thJA Note T = 25 C, unless otherwise specified amb Document Number: 84685 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.6, 26-Feb-09 449TEMD5020X01 Silicon PIN Photodiode, RoHS Compliant, Released for Vishay Semiconductors Lead (Pb)-free Reflow Soldering, AEC-Q101 Released BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 48 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 17 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 32 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 25 35 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 900 nm p Range of spectral bandwidth 430 to 1100 nm 0.1 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 1000 1.4 V =5 V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) 94 8403 T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 84685 450 Rev. 1.6, 26-Feb-09 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro