TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 3 Peak wavelength: = 875 nm p High reliability Angle of half intensity: = 20 Low forward voltage Suitable for high pulse current operation 94 8636 Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS DESCRIPTION Infrared remote control and free air data transmission The TSHA440. series are infrared, 875 nm emitting diodes in systems with comfortable radiation angle GaAlAs technology, molded in a clear, untinted plastic This emitter series is dedicated to systems with panes in package. transmission space between emitter and detector, because of the low absorption of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r TSHA4400 20 20 875 600 TSHA4401 30 20 875 600 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHA4400 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 TSHA4401 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 2A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 300 K/W thJA Rev. 1.8, 15-Sep-14 Document Number: 81017 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 R = 300 K/W thJA R = 300 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21312 T - Ambient Temperature (C) 21311 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.5 1.8 V F p F Forward voltage I = 1.5 A, t = 100 s V 3.2 4.9 V F p F Temperature coefficient of V I = 100 mA TK -1.6 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 20 pF R j Temperature coefficient of I = 100 mA TK -0.7 %/K e F e Angle of half intensity 20 deg Peak wavelength I = 100 mA 875 nm F p Spectral bandwidth I = 100 mA 80 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p I = 100 mA t 600 ns F r Rise time I = 1.5 A t 300 ns F r I = 100 mA t 600 ns F f Fall time I = 1.5 A t 300 ns F f Virtual source diameter d 1.8 mm TYPE DEDICATED CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT TSHA4400 I 12 20 60 mW/sr e I = 100 mA, t = 20 ms F p TSHA4401 I 16 30 60 mW/sr e Radiant intensity TSHA4400 I 140 240 mW/sr e I = 1.5 mA, t = 100 s F p TSHA4401 I 190 360 mW/sr e TSHA4400 20 mW e Radiant power I = 100 mA, t = 20 ms F p TSHA4401 24 mW e Rev. 1.8, 15-Sep-14 Document Number: 81017 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F