TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 Peak wavelength: = 950 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 5 Low forward voltage 94 8483 Suitable for high pulse current operation Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance with DESCRIPTION RoHS 2002/95/EC and WEEE 2002/96/EC TSTS7100 is an infrared, 950 nm emitting diode in GaAs APPLICATIONS technology in a hermetically sealed TO-18 package with lens. Radiation source in near infrared range PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r TSTS7100 > 10 5 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSTS7100 Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current T 25 C I 250 mA case F Peak forward current t /T = 0.5, t 100 s, T 25 C I 500 mA p p case FM Surge forward current t 100 s I 2.5 A p FSM P 170 mW V Power dissipation T 25 C P 500 mW case V Junction temperature T 100 C j Storage temperature range T - 55 to + 100 C stg Thermal resistance junction/ambient leads not soldered R 450 K/W thJA Thermal resistance junction/case leads not soldered R 150 K/W thJC Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: emittertechsupport vishay.com Document Number: 81047 260 Rev. 1.8, 04-Sep-08TSTS7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 600 300 R thJC 250 500 200 400 R thJC 150 300 R thJA 100 200 R thJA 50 100 0 0 0 25 50 75 100 125 0 204060 80 100 12790 T - Ambient Temperature (C) 94 8018 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t 20 ms V 1.3 1.7 V F p F Temperature coefficient of V I = 100 mA TK - 1.3 mV/K F F VF Breakdown voltage I = 100 A V5V R (BR) Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 30 pF R j Radiant intensity I = 100 mA, t = 20 ms I 10 50 mW/sr F p e Radiant power I = 100 mA, t 20 ms 7mW F p e Temperature coefficient of I = 100 mA TK - 0.8 %/K e F e Angle of half intensity 5 deg Peak wavelength I = 100 mA 950 nm F p Spectral bandwidth I = 100 mA 50 nm F I = 100 mA t 800 ns F r Rise time I = 1.5 A, t /T = 0.01, t 10 s t 400 ns F p p r Virtual source diameter d 1.5 mm Note T = 25 C, unless otherwise specified amb BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 4 1 10 10 3 10 I = 2.5 A (single pause) FSM 2 10 t /T=0.01 p 0 10 0.05 1 10 0.1 0.2 0 10 0.5 -1 -1 10 10 0 1 2 3 4 -2 -1 0 1 2 10 10 10 10 10 t - Pulse Duration (ms) V - Forward Voltage (V) 94 8003 94 7996 p F Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Document Number: 81047 For technical questions, contact: emittertechsupport vishay.com www.vishay.com Rev. 1.8, 04-Sep-08 261 P - Power Dissipation (mW) I - Forward Current (A) V F I - Forward Current (mA) I- Forward Current (mA) F F