UH20FCT-E3, UHB20FCT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Recovery Rectifier FEATURES Power pack Oxide planar chip junction TO-263AB TO-220AB Ultrafast recovery times K Soft recovery characteristics Low switching losses, high efficiency High forward surge capability 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 1 3 245 C (for TO-263AB package) 2 1 Solder bath temperature 275 C maximum, 10 s per UH20FCT UHB20FCT PIN 1 JESD 22-B106 (for TO-220AB package) PIN 1 K PIN 2 CASE HEATSINK Material categorization: For definitions of compliance PIN 3 PIN 2 please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency power factor correctors, switching I 2 x 10 A mode power supplies, freewheeling diodes and secondary F(AV) DC/DC rectification application. V 300 V RRM I 180 A FSM MECHANICAL DATA t 25 ns rr Case: TO-220AB and TO-263AB V at I 0.83 V F F Molding compound meets UL 94V-0 flammability rating T max. 175 C J Base P/N-E3 - RoHS-compliant, commercial grade Package TO-220AB, TO-263AB Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 Diode variations Common cathode E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL UH20FCT UHB20FCT UNIT Max. repetitive peak reverse voltage V 300 V RRM per device 20 Max. average forward rectified I A F(AV) current (see Fig.1) per diode 10 Peak forward surge current 8.3 ms single half per diode I 180 A FSM sine-wave superimposed on rated load Operating junction and storage temperature range T , T - 55 to + 175 C J STG Revision: 15-Aug-13 Document Number: 88964 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000UH20FCT-E3, UHB20FCT-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5.0 A T = 25 C 0.96 - F J I = 5.0 A T = 125 C 0.77 - F J (1) Max. instantaneous forward voltage per diode V V F I = 10 A T = 25 C 1.0 1.2 F J I = 10 A T = 125 C 0.83 0.90 F J T = 25 C 0.5 5 J (2) Max. reverse current per diode V = 300 V I A R R T = 125 C 25 150 J I = 0.5 A, I = 1.0 A, F R Max. reverse recovery time t 20 25 ns rr I = 0.25 A rr I = 1.0 A, dI/dt = 50 A/s, F Max. reverse recovery time per diode t 28 35 ns rr V = 30 V, I = 0.1 I R rr RM Typical softness factor (t /t ) S0.36 - - b a I = 10 A, dI/dt = 200 A/s, F Typical reverse recovery current V = 200 V, T = 125 C I 7.0 - A R J RM per diode Typical stored charge Q 160 - nC rr I = 10 A, dI/dt = 80 A/s, F Typical forward recovery time per diode t 150 - ns fr V = 1.1 x V FR F max. Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL UH20FCT UHB20FCT UNIT Typical thermal resistance per diode R 2.0 2.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB UH20FCT-E3/4W 1.88 4W 50/tube Tube TO-263AB UHB20FCT-E3/4W 1.38 4W 50/tube Tube TO-263AB UHB20FCT-E3/8W 1.38 8W 800/reel Tape and reel Revision: 15-Aug-13 Document Number: 88964 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000