VEMD5510C www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface-mount Package form: top view Dimensions (L x W x H in mm): 5 x 4 x 0.9 2 Radiant sensitive area (in mm ): 7.5 High photo sensitivity Suppression filter for near infrared radiation Fast response times Angle of half sensitivity: = 65 Floor life: 72 h, MSL 4, according to J-STD-020 DESCRIPTION Material categorization: for definitions of compliance VEMD5510C is a high speed and high sensitive PIN please see www.vishay.com/doc 99912 photodiode. It is a low profile surface-mount device (SMD) 2 including the chip with a 7.5 mm sensitive area detecting APPLICATIONS visible light much like the human eye. The diode has its peak sensitivity at 550 nm and a low capacitance. Wearables Optical heart rate monitoring Ambient light sensors PRODUCT SUMMARY COMPONENT I (A) () (nm) ra 0.5 VEMD5510C 0.6 65 440 to 700 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD5510C Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view VEMD5510C-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to reflow solder profile Fig. 8 T 260 C sd Thermal resistance junction-to-ambient R 350 K/W thJA ESD safety HBM 2000 V, 1.5 k, 100 pF, 3 pulses ESD 2 kV HBM Rev. 1.1, 20-May-2019 Document Number: 84354 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD5510C www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -0.9 1.3 V F F Breakdown voltage I = 100 A, E = 0 V 20 - - V R (BR) Reverse dark current V = 10 V, E = 0 I - 0.2 10 nA R ro V = 0 V, f = 1 MHz, E = 0 C -80- pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -30 40 pF R D Open circuit voltage E = 100 lx, CIE illuminant A V - 240 - mV V o Temperature coefficient of V E = 100 lx, CIE illuminant A TK --2.5 - mV/K o V Vo Short circuit current E = 100 lx, CIE illuminant A I -0.6 - A V k 2 E = 0.2 mW/cm , = 525 nm, V = 5 V I 2.0 2.6 - A e R ra Reverse light current E = 100 lx, CIE illuminant A, V = 5 V I 0.46 0.55 - A V R ra Angle of half sensitivity - 65 - Wavelength of peak sensitivity - 550 - nm p Range of spectral bandwidth - 440 to 700 - nm 0.5 Rise time V = 5 V, R = 50 , = 525 nm t -40- ns R L r Fall time V = 5 V, R = 50 , = 525 nm t -30- ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. 1000 10 V = 5 V, CIE illuminant A R V = 10 V R 100 1 10 0.1 1 0.1 0.01 020 40 60 80 100 10 100 1000 T - Ambient Temperature (C) E - Illuminance (lx) amb V Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Reverse Light Current vs. Irradiance Rev. 1.1, 20-May-2019 Document Number: 84354 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Reverse Light Current (A) ra