VEMT2503X01, VEMT2523X01 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 AEC-Q101 qualified High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 35 VEMT2503X01 VEMT2523X01 Package matched with IR emitter series VSMB2943RGX01 and VSMB2943GX01 Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION VEMT2503X01 series are silicon NPN epitaxial planar APPLICATIONS phototransistors in a miniature dome lens, clear epoxy Detector in automotive applications package for surface mounting. The device is sensitive to visible and near infrared radiation. Photo interrupters Miniature switches Counters Encoders Position sensors PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 VEMT2503X01 2.7 35 470 to 1090 VEMT2523X01 2.7 35 470 to 1090 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2503X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2523X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.0, 08-Apr-13 Document Number: 84168 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VEMT2503X01, VEMT2523X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 50 mA C Power power dissipation T 75 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature Acc. reflow profile fig. 8 T 260 C sd Thermal resistance junction/ambient Acc. J-STD-051 R 250 K/W thJA 120 100 80 60 R = 250 K/W thJA 40 20 0 0 10 203040 50607080 90 100 21619 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 V C CEO Collector dark current V = 5 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C 25 pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 1.3 2.7 4.1 mA ca V = 5 V CE Angle of half sensitivity 35 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 470 to 1090 nm 0.1 Collector emitter saturation voltage I = 0.05 mA V 0.4 V C CEsat 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of Ica Tk 1.1 %/K Ica V = 5 V CE Rev. 1.0, 08-Apr-13 Document Number: 84168 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V