VS-150EBU02HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES Ultrafast recovery time 175 C max. operating junction temperature Screw mounting only Cathode Anode AEC-Q101 qualified PowerTab package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PowerTab BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing PRIMARY CHARACTERISTICS Reduced parts count I 150 A F(AV) V 200 V R DESCRIPTION/APPLICATIONS V at I 0.77 V F F These diodes are optimized to reduce losses and EMI/RFI in t (typ.) See recovery table rr high frequency power conditioning systems. T max. 175 C J The softness of the recovery eliminates the need for a Package PowerTab snubber in most applications. These devices are ideally Circuit configuration Single suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 200 V R Continuous forward current I T = 116 C 150 F(AV) C Single pulse forward current I T = 25 C 1600 A FSM C Maximum repetitive forward current I Square wave, 20 kHz 380 FRM Operating junction and storage T , T -55 to +175 C J Stg temperatures ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 150 A - 0.94 1.10 F Forward voltage V F I = 150 A, T = 175 C - 0.77 0.88 F J V = V rated - - 50 A R R Reverse leakage current I R T = 150 C, V = V rated - - 2 mA J R R Junction capacitance C V = 200 V - 180 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 30-Jan-18 Document Number: 93999 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-150EBU02HF4 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS T = 25 C -48- J Reverse recovery time t ns rr T = 125 C - 88 - J I = 150 A F T = 25 C - 5 - J Peak recovery current I V = 160 V A RRM R T = 125 C - 12 - J dI /dt = 200 A/s F T = 25 C - 120 - J Reverse recovery charge Q nC rr T = 125 C - 520 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.35 thJC junction to case K/W Thermal resistance, R Mounting surface, flat, smooth and greased - 0.2 - thCS case to heatsink - - 5.02 g Weight -0.18 - oz. 1.2 2.4 N m Mounting torque - (10) (20) (lbf in) Marking device Case style PowerTab 150EBU02H 1000 1000 T = 175 C J 100 125 C 100 10 1 T = 175 C J 25 C 10 0.1 T = 125 C J T = 25 C J 0.01 1 0.001 0 50 100 150 200 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 30-Jan-18 Document Number: 93999 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R