VS-15ETH06S-M3, VS-15ETH06-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 2 1 175 C operating junction temperature 1 Single die center tap module 3 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak D PAK (TO-263AB) 3 TO-262AA of 245 C Base Material categorization: for definitions of compliance cathode 2 2 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast 3 1 3 1 recovery time, and soft recovery. N/C Anode N/C Anode The planar structure and the platinum doped life time control VS-15ETH06S-M3 VS-15ETH06-1-M3 guarantee the best overall performance, ruggedness and PRIMARY CHARACTERISTICS reliability characteristics. I 15 A These devices are intended for use in PFC boost stage in th e F(AV) AC/DC section of SMPS, inverters or as freewheeling V 600 V R diodes. V at I 1.3 V F F The extremely optimized stored charge and low recovery t (typ.) 22 ns rr current minimize the switching losses and reduce over T max. 175 C J dissipation in the switching element and snubbers. 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 140 C 15 F(AV) C Non-repetitive peak surge current I T = 25 C 120 A FSM J Peak repetitive forward current I 30 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 1.8 2.2 F Forward voltage V F I = 15 A, T = 150 C - 1.3 1.6 F J V = V rated - 0.2 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 500 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 18-Jun-2019 Document Number: 96301 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-15ETH06S-M3, VS-15ETH06-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 22 30 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 28 35 F F R Reverse recovery time t ns rr T = 25 C -29 - J = 125 C - 75 - T J I = 15 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7 - J V = 390 V R T = 25 C - 57 - J Reverse recovery charge Q C rr T = 125 C - 300 - J Reverse recovery time t -51 - ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -20 - A RRM J F V = 390 V R Reverse recovery charge Q - 580 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.01.3 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 PAK (TO-263AB) 15ETH06S Case style D Marking device Case style TO-262AA 15ETH06-1 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J T = 175 C J 1 T = 100 C T = 150 C J J 10 T = 25 C J 0.1 T = 25 C 0.01 J 0.001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 18-Jun-2019 Document Number: 96301 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous ForwardCurrent (A) F I - Reverse Current (A) R