VS-15AWL06FN-M3, VS-15EWL06FN-M3 www.vishay.com Vishay Semiconductors Ultralow V Ultrafast Rectifier, 15 A FRED Pt F FEATURES Ultrafast recovery time, extremely low V and F soft recovery 175 C maximum operating junction temperature For PFC DCM operation Low leakage current DPAK (TO-252AA) Meets MSL level 1, per J-STD-020, LF maximum peak Base cathode 4, 2 2, 4 of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 1 3 1 3 Anode Anode N/C Anode State of the art, ultralow V , soft-switching hyperfast F rectifiers optimized for Discontinuous (Critical) Mode (DCM ) VS-15AWL06FN-M3 VS-15EWL06FN-M3 Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge PRIMARY CHARACTERISTICS and low recovery current minimize the switching losses and I 15 A F(AV) reduce over dissipation in the switching element an d V 600 V R snubbers. V at I 0.85 V The device is also intended for use as a freewheeling diode F F in power supplies and other power switching applications. t (typ.) 60 ns rr T max. 175 C J Package DPAK (TO-252AA) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 148 C 15 F(AV) C Non-repetitive peak surge current I T = 25 C 180 A FSM J Peak repetitive forward current I T = 148 C, f = 20 kHz, d = 50 % 30 FM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 0.99 1.05 F Forward voltage V F I = 15 A, T = 150 C - 0.85 0.92 F J V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 120 J R R Junction capacitance C V = 600 V - 11 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 05-Mar-2021 Document Number: 93568 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-15AWL06FN-M3, VS-15EWL06FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 60 120 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 190 - F F R Reverse recovery time t ns rr T = 25 C - 220 - J T = 125 C - 290 - J I = 15 A F T = 25 C - 21 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 25 - J V = 390 V R T = 25 C - 2.6 - J Reverse recovery charge Q C rr T = 125 C - 4 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.41.8 thJC junction to case C/W Thermal resistance, R -- 70 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. 15AWL06FN Marking device Case style DPAK (TO-252AA) 15EWL06FN 100 100 T = 175 C J 10 T = 150 C J T = 175 C J T = 125 C J 1 10 T = 100 C J 0.1 T = 75 C J T = 125 C J T = 50 C J 1 0.01 T = 25 C J T = 25 C J 0.001 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 05-Mar-2021 Document Number: 93568 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R