VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES 4 Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current 3 3 2 2 Fully isolated package (V = 2500 V ) INS RMS 1 1 TO-220AB TO-220AB FULL-PAK UL E78996 approved Designed and qualified according to Base Available common cathode JEDEC -JESD 47 4 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 2 Common Common DESCRIPTION / APPLICATIONS cathode cathode 1 3 1 3 Anode Anode Anode Anode 300 V series are the state of the art hyperfast recovery VS-20CTH03PbF VS-20CTH03FPPbF rectifiers designed with optimized performance of forward VS-20CTH03-N3 VS-20CTH03FP-N3 voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time PRODUCT SUMMARY control, guarantee the best overall performance, ruggedness and reliability characteristics. Package TO-220AB, TO-220FP These devices are intended for use in the output rectification I 2 x 10 A F(AV) stage of SMPS, UPS, DC/DC converters as well as V 300 V R freewheeling diodes in low voltage inverters and chopper V at I 0.85 V F F motor drives. t typ. See Recovery table rr Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over T max. 175 C J dissipation in the switching element and snubbers. Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 300 V RRM per diode T = 160 C C 10 Average rectified forward current (FULL-PAK) per diode I T = 135 C F(AV) C A per device 20 Non-repetitive peak surge current I T = 25 C 120 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 10 A - 1.05 1.25 F Forward voltage V F I = 10 A, T = 125 C - 0.85 0.95 F J V = V rated - - 20 R R Reverse leakage current I A R T = 125 C, V = V rated - 6 200 J R R Junction capacitance C V = 300 V - 30 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 13-May-16 Document Number: 94010 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -31 - J T = 125 C - 42 - J I = 10 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.6 - J V = 200 V R T = 25 C - 36 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range per diode -- 1.5 Thermal resistance, Mounting surface, flat, smooth, R C/W thJC junction to case and greased (FULL-PAK) per diode - - 3.9 Case style TO-220AB 20CTH03 Marking device Case style TO-220 FULL-PAK 20CTH03FP 100 100 T = 175 C J 10 T = 150 C J T = 125 C J 1 T = 100 C J 10 T = 175 C J T = 75 C 0.1 J T = 125 C J T = 25 C J T = 50 C J 0.01 T = 25 C J 1 0.001 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 50 100 150 200 250 300 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-May-16 Document Number: 94010 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (mA) R