Product Information

VS-20ETF04STRL-M3

VS-20ETF04STRL-M3 electronic component of Vishay

Datasheet
Rectifiers New Input Diodes - D2PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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8000: USD 1.5397 ea
Line Total: USD 12317.6

0 - Global Stock
MOQ: 8000  Multiples: 8000
Pack Size: 8000
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0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 8000
Multiples : 8000
8000 : USD 1.3685
10400 : USD 1.357

     
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VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 245 C Designed and qualified according to 2 JEDEC -JESD 47 1 Material categorization: for definitions of compliance 13 3 please see www.vishay.com/doc 99912 Anode -- Anode 2 D PAK (TO-263AB) APPLICATIONS Output rectification and freewheeling in inverters, PRIMARY CHARACTERISTICS choppers and converters I 20 A Input rectifications where severe restrictions on F(AV) conducted EMI should be met V 200 V, 400 V, 600 V R V at I 1.3 V F F DESCRIPTION I 300 A FSM The VS-20ETF..S-M3 soft recovery rectifier series has been t 60 ns rr optimized for combined short reverse recovery time and low forward voltage drop. T max. 150 C J The glass passivation ensures stable reliable operation in Snap factor 0.6 the most severe temperature and power cycling conditions. 2 Package D PAK (TO-263AB) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 200 to 600 V RRM I 300 A FSM V 10 A, T = 25 C 1.2 V F J t 1 A, 100 A/s 60 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF02S-M3 200 300 VS-20ETF04S-M3 400 500 5 VS-20ETF06S-M3 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 97 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Revision: 27-Oct-17 Document Number: 94886 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A, T = 25 C 1.30 J Maximum forward voltage drop V V FM 60 A, T = 25 C 1.67 J Forward slope resistance r 12.5 m t Threshold voltage V T = 150 C 0.9 V F(TO) J T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 5.0 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 160 ns FM rr I at 20 A t F pk rr Reverse recovery current I 100 A/s 10 A t t rr a b t 25 C dir Reverse recovery charge Q 1.25 C rr dt Q rr I Snap factor S Typical 0.6 RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case C/W Maximum thermal resistance (1) R 40 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 20ETF02S 2 Marking device Case style D PAK (TO-263AB) 20ETF04S 20ETF06S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note AN-994 150 150 20ETF.. Series 20ETF.. Series R (DC) = 0.9 K/W R (DC) = 0.9 K/W 140 thJC thJC 140 130 130 120 Conduction period Conduction angle 120 110 110 30 100 60 100 90 90 120 180 30 60 90 90 120 80 DC 180 70 80 06284 10 12 14 16 18 20 22 025310 15 2050 35 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 27-Oct-17 Document Number: 94886 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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BEYSCHLAG
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