VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 25 A FEATURES Base Glass passivated pellet chip junction cathode 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according to 2 1 JEDEC -JESD 47 1 3 Material categorization: for definitions of compliance 3 Anode Anode please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) APPLICATIONS Input rectification PRIMARY CHARACTERISTICS Vishay switches and output rectifiers which are available I 25 A F(AV) in identical package outlines V 800 V, 1000 V, 1200 V R V at I 1.14 V F F DESCRIPTION I 300 A FSM The VS-25ETS..S-M3 rectifier High Voltage Series has been T max. 150 C j optimized for very low forward voltage drop, with moderate 2 Package D PAK (TO-263AB) leakage. The glass passivation technology used has reliable Circuit configuration Single operation up to 150 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 20 23 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 25 A F(AV) V 800 to 1200 V RRM I 300 A FSM V 10 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE RRM RSM I AT 150 C RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE mA V V VS-25ETS08S-M3 800 900 VS-25ETS10S-M3 1000 1100 1 VS-25ETS12S-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 106 C, 180 conduction half sine wave 25 F(AV) C 10 ms sine pulse, rated V applied 250 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Revision: 27-Oct-17 Document Number: 94890 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-25ETS08S-M3, VS-25ETS10S-M3, VS-25ETS12S-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 25 A, T = 25 C 1.14 V FM J Forward slope resistance r 9.62 m t T = 150 C J Threshold voltage V 0.87 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 25ETS08S 2 Marking device Case style D PAK (TO-263AB) 25ETS10S 25ETS12S 150 150 R (DC) = 0.9 K/W R (DC) = 0.9 K/W thJC thJC 140 140 130 Conduction angle 130 Conduction period 120 120 DC 110 110 100 30 90 90 100 60 180 60 90 120 30 180 120 80 90 05210 15 205 30 05210 15 2053035 40 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 27-Oct-17 Document Number: 94890 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)