X-On Electronics has gained recognition as a prominent supplier of VS-2EFH01HM3I Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-2EFH01HM3I Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

VS-2EFH01HM3I Vishay

VS-2EFH01HM3I electronic component of Vishay
VS-2EFH01HM3I Vishay
VS-2EFH01HM3I Rectifiers
VS-2EFH01HM3I  Semiconductors

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Part No. VS-2EFH01HM3I
Manufacturer: Vishay
Category: Rectifiers
Description: Vishay Semiconductors Rectifiers Hypfst Rect 2A 100V AEC-Q101 Qualified
Datasheet: VS-2EFH01HM3I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4225 ea
Line Total: USD 0.42 
Availability - 12129
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
12129
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4225
10 : USD 0.2725
100 : USD 0.1836
500 : USD 0.1452
1000 : USD 0.1221
2500 : USD 0.1122
5000 : USD 0.1056
10000 : USD 0.1001
20000 : USD 0.0957

   
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RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Product
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Factory Pack Quantity :
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the VS-2EFH01HM3I from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-2EFH01HM3I and other electronic components in the Rectifiers category and beyond.

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333 3 VS-2EFH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and rr soft recovery 175 C maximum operating junction temperature Specified for output and snubber operation Low forward voltage drop Top view Bottom view Low leakage current SMF (DO-219AB) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Cathode Anode Wave and reflow solderable Compatible to SOD-123W package case outline LINKS TO ADDITIONAL RESOURCES AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance 3D Models please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically PRIMARY CHARACTERISTICS designed with optimized performance of forward voltage I 2 A F(AV) drop and hyperfast recovery time. V 100 V R The planar structure and the platinum doped life time control V at I (typ. 125 C) 0.75 V F F guarantee the best overall performance, ruggedness, and t 25 ns rr reliability characteristics. T max. 175 C J These devices are intended for use in snubber, boost, Package SMF (DO-219AB) lighting, piezo-injection, as high frequency rectifiers, an d Circuit configuration Single freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM (1) Average rectified forward current I T = 150 C 2 F(AV) C A Non-repetitive peak surge current I T = 25 C 50 FSM J Operating junction and storage temperature range T , T -65 to +175 C J Stg Note (1) Device on PCB with 8 mm x 16 mm soldering lands Revision: 03-Feb-2021 Document Number: 95788 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-2EFH01HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 2 A - 0.88 0.95 V F Forward voltage V F I = 2 A, T = 125 C - 0.75 0.82 F J V = V rated - - 2 R R Reverse leakage current I A R T = 125 C, V = V rated - 0.5 8 J R R Junction capacitance C V = 100 V - 8 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 24 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -16- J T = 125 C - 22 - J I = 2 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3 - J V = 160 V R T = 25 C - 16 - J Reverse recovery charge Q nC rr T = 125 C - 30 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Device mounted on PCB with 8 mm x 16 mm Thermal resistance, junction to mount R -- 15 C/W thJM soldering lands Device mounted on PCB with 2 mm x 3.5 mm Thermal resistance, junction to ambient R - - 130 C/W thJA soldering lands 0.015 g Approximate weight 0.0005 oz. Marking device Case style SMF (DO-219AB) MBH 100 100 175 C 10 150 C T = 175 C 10 J 1 125 C T = 150 C J 0.1 1 T = 125 C J 25 C T = 25 C 0.01 J T = -40 C J 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 60 70 80 90 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 03-Feb-2021 Document Number: 95788 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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